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EMI8132MUTAG

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 0
1 Publication Order Number:
EMI8132/D
EMI8131, EMI8132,
EMI8133
Common Mode Filter with
ESD Protection
Functional Description
The EMI813x is a family of Common Mode Filters (CMF) with
integrated ESD protection, a first in the industry. Differential signaling
I/Os can now have both common mode filtering and ESD protection in
one package. The EMI813x protects against ESD pulses up to ±15 kV
contact per the IEC61000−4−2 standard.
The EMI813x is well−suited for protecting systems using
high−speed differential ports such as MIPI D−PHY; corresponding
ports in removable storage, and other applications where ESD
protection are required in a small footprint package.
The EMI813x is available in a RoHS−compliant, XDFN−10 for 2
Differential Pair and XDFN−16 package for 3 Differential Pair.
Features
• Total Insertion Loss DM
LOSS
< 3.7 dB at 2.5 GHz
• Large Differential Mode Cutoff Frequency f
3dB
> 2.5 GHz
• High Common Mode Stop Band Attenuation
• Low Channel Resistance 6.0 W
• Provides ESD Protection to IEC61000−4−2 Level 4, ±15 kV Contact
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• USB 3.0
• MHL 2.0
• mSD Card
• eSATA
• HDMI/DVI Display in Mobile Phones
• MIPI D−PHY (CSI−2, DSI, etc) in Mobile Phones and Digital Still
Cameras
Figure 1. EMI8131 Electrical Schematic
http://onsemi.com
ELECTRICAL SCHEMATICS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
EMI8132
EMI8133
XX = Specific Device Code
M = Date Code
G = Pb−Free Package
MARKING DIAGRAMS
XDFN6
CASE 711AV
XDFN16
CASE 711AW
M2 M
G
1
M3 M
G
XDFN10
CASE 711AU
MA M
G
1
1
Device Package Shipping
†
ORDERING INFORMATION
EMI8131MUTAG
EMI8132MUTAG
XDFN6
3000 / Tape & Reel
EMI8133MUTAG 3000 / Tape & Reel
XDFN10
XDFN16
3000 / Tape & Reel
EMI8131, EMI8132, EMI8133
http://onsemi.com
2
PIN FUNCTION DESCRIPTION
Pin Name
Device Pin
Type Description
EMI8131 EMI8132 EMI8133
In_1+ 1 1 1 I/O CMF Channel 1+ to Connector (External)
In_1− 2 2 2 I/O
CMF Channel 1− to Connector (External)
Out_1+ 6 10 16 I/O CMF Channel 1+ to ASIC (Internal)
Out_1− 5 9 15 I/O
CMF Channel 1− to ASIC (Internal)
In_2+ NA 4 4 I/O CMF Channel 2+ to Connector (External)
In_2− NA 5 5 I/O
CMF Channel 2− to Connector (External)
Out_2+ NA 7 13 I/O CMF Channel 2+ to ASIC (Internal)
Out_2− NA 6 12 I/O
CMF Channel 2− to ASIC (Internal)
In_3+ NA NA 7 I/O CMF Channel 3+ to Connector (External)
In_3− NA NA 8 I/O
CMF Channel 3− to Connector (External)
Out_3+ NA NA 10 I/O CMF Channel 3+ to ASIC (Internal)
Out_3− NA NA 9 I/O
CMF Channel 3− to ASIC (Internal)
VN 3,4 3, 8 3,6,14,11 GND Ground
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Operating Temperature Range T
OP
−40 to +85 °C
Storage Temperature Range T
STG
−65 to +150 °C
Maximum Lead Temperature for Soldering Purposes
(1/8” from Case for 10 seconds)
T
L
260 °C
DC Current per Line I
LINE
100 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
EMI8131, EMI8132, EMI8133
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Symbol
Parameter Test Conditions Min Typ Max Unit
V
RWM
Reverse Working Voltage (Note 3) 3.3 V
V
BR
Breakdown Voltage I
T
= 1 mA; (Note 4) 4.0 9.0 V
I
LEAK
Channel Leakage Current
T
A
= 25°C, V
IN
= 3.3 V, GND = 0 V
1.0
mA
R
CH
Channel Resistance
(Pins 1−6, 2−5) − EMI8131
(Pins 1−10, 2−9, 4−7 and 5−6) − EMI8132
(Pins 1−16, 2−15, 4−13, 5−12, 7−10 and 8−9) − EMI8133
6.0 W
DM
LOSS
Differential Mode Insertion Loss @ 2.5 GHz 3.7 dB
f
3dB
Differential Mode Cut-off Frequency 50 W Source and Load
Termination
2.5 GHz
F
atten
Common Mode Stop Band Attenuation @ 750 MHz 30 dB
V
ESD
In-system ESD Withstand Voltage
a) Contact discharge per IEC 61000-4-2 standard, Level 4
(External Pins)
b) Contact discharge per IEC 61000-4-2 standard, Level 1
(Internal Pins)
(Notes 1 and 2)
±15
±2
kV
V
CL
TLP Clamping Voltage Forward I
PP
= 8 A
Forward I
PP
= 16 A
Forward I
PP
= −8 A
Forward I
PP
= −16 A
8.94
13.4
−3.96
−7.62
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Standard IEC61000−4−2 with C
Discharge
= 150 pF, R
Discharge
= 330, GND grounded.
2. These measurements performed with no external capacitor.
3. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal to or greater than the DC
or continuous peak operating voltage level.
4. V
BR
is measured at pulse test current I
T
.
P1-P3P4-P6P7-P8

EMI8132MUTAG

Mfr. #:
Buy EMI8132MUTAG
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors 2PAIR FOR MIPI
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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