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VS-6TQ040-N3

P1-P3P4-P6P7-P7
VS-6TQ...PbF Series, VS-6TQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 29-Aug-11
1
Document Number: 94252
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 6 A
FEATURES
• 175 °C T
J
operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-6TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
6 A
V
R
35 V, 40 V, 45 V
V
F
at I
F
0.53 V
I
RM
max. 7 mA at 125 °C
T
J
max. 175 °C
Diode variation Single die
E
AS
8 mJ
Anode
1
3
Cathode
Base
cathode
2
TO-220AC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 6A
V
RRM
Range 35 to 45 V
I
FSM
t
p
= 5 μs sine 690 A
V
F
6 A
pk
, T
J
= 125 °C 0.53 V
T
J
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-
6TQ035PbF
VS-
6TQ035-N3
VS-
6TQ040PbF
VS-
6TQ040-N3
VS-
6TQ045PbF
VS-
6TQ045-N3
UNITS
Maximum DC
reverse voltage
V
R
35 35 40 40 45 45 V
Maximum working
peak reverse
voltage
V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 164 °C, rectangular waveform 6 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
690
A
10 ms sine or 6 ms rect. pulse 140
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1.20 A, L = 11.10 mH 8 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.20 A
VS-6TQ...PbF Series, VS-6TQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 29-Aug-11
2
Document Number: 94252
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
6 A
T
J
= 25 °C
0.60
V
12 A 0.73
6 A
T
J
= 125 °C
0.53
12 A 0.64
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.8
mA
T
J
= 125 °C 7
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.35 V
Forward slope resistance r
t
18.23 m:
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 400 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 8 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 175 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
2.2
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AC
6TQ035
6TQ040
6TQ045
VS-6TQ...PbF Series, VS-6TQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 29-Aug-11
3
Document Number: 94252
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward
Current (A)
1.40.2 0.4 0.6 0.8 1.0 1.2 1.6
1
10
100
T
J
= 25 °C
T
J
= 175 °C
T
J
= 125 °C
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
0.0001
0.001
0.01
0.1
1
0 5 10 15 20 25 30 35 40 45
10
100
T
J
= 150 °C
T
J
= 175 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
T
J
= 75 °C
T
J
= 50 °C
1000
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
100
10 5030 40
T
J
= 25 °C
20
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
0.001
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.75
D = 0.33
D = 0.25
D = 0.20
D = 0.50
Single pulse
(thermal resistance)
P1-P3P4-P6P7-P7

VS-6TQ040-N3

Mfr. #:
Buy VS-6TQ040-N3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-6TQ040-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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