VS-2N681, VS-2N5205 Series
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Vishay Semiconductors
Revision: 19-Nov-15
3
Document Number: 93706
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Note
(1)
JEDEC registered value
Note
(1)
JEDEC registered value
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS 2N681-92 2N5205-07 UNITS
Maximum non-repetitive
rate of rise of turned-on
current
V
DM
= 25 V to 600 V
dI/dt
T
C
= 125 °C, V
DM
= Rated V
DRM
,
I
TM
= 2 x dI/dt, gate pulse = 20 V,
15 , t
p
= 6 μs, t
r
= 0.1 μs maximum
Per JEDEC standard RS-397, 5.2.2.6
100 -
A/μs
V
DM
= 700 V to 800 V 75 -
T
C
= 125 °C, V
DM
= 600 V, I
TM
= 200 A at
400 Hz maximum, gate pulse = 20 V, 15 ,
t
p
= 6 μs, t
r
= 0.1 μs maximum
Per JEDEC standard RS-397, 5.2.2.6
- 100
Typical delay time t
d
T
C
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 10 A
DC resistive circuit, gate pulse = 10 V,
40 source, t
p
= 6 μs, t
r
= 0.1 μs
11μs
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS 2N681-92 2N5205-07 UNITS
Minimum critical rate of
rise of off-state voltage
dV/dt
T
J
= 125 °C, exponential
to 100 % rated V
DRM
Gate open
circuited
100
(typical)
100
(1)
V/μs
T
J
= 125 °C, exponential
to 67 % rated V
DRM
250
(typical)
250
Maximum reverse
leakage current
V
RRM
, V
DRM
= 400 V
I
DRM
,
I
RRM
T
J
= 125 °C
3.5 -
mA
V
RRM
, V
DRM
= 500 V 3.5 -
V
RRM
, V
DRM
= 600 V 2.5 3.3
V
RRM
, V
DRM
= 700 V 2.2 -
V
RRM
, V
DRM
= 800 V 2 2.5
V
RRM
, V
DRM
= 1000 V - 2
V
RRM
, V
DRM
= 1200 V - 1.7
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS 2N681-92 2N5205-07 UNITS
Maximum peak gate power P
GM
t
p
< 5 ms for 2N681 series;
t
p
< 500 μs for 2N5204 series
5
(1)
60
(1)
W
Maximum average gate power P
G(AV)
0.5
(1)
0.5
(1)
Maximum peak positive gate current +I
GM
2
(1)
2A
Maximum peak positive gate voltage +V
GM
10
(1)
-
V
Maximum peak negative gate voltage -V
GM
5
(1)
5
(1)
Maximum required DC gate
current to trigger
I
GT
T
C
= min.
rated value
Maximum required gate trigger current
is the lowest value which will trigger all
units with + 6 V anode to cathode
80
(1)
80
(1)
mA
T
C
= 25 °C 40 40
T
C
= 125 °C 18.5 20
Typical DC gate current to trigger T
C
= 25 °C, + 6 V anode to cathode 30 30
Maximum required DC gate
voltage to trigger
V
GT
T
C
= - 65 °C
Maximum required gate trigger voltage
is the lowest value which will trigger all
units with + 6 V anode to cathode
3
(1)
3
(1)
V
T
C
= 25 °C 2 2
Typical DC gate voltage to trigger T
C
= 25 °C, + 6 V anode to cathode 1.5 1.5
Maximum DC gate voltage
not to trigger
V
GD
T
C
= 125 °C
Maximum gate voltage not to trigger is
the maximum value which will not
trigger any unit with rated V
DRM
anode
to cathode
0.25
(1)
0.25
(1)
V
