BD159

© Semiconductor Components Industries, LLC, 2013
March, 2017 Rev. 8
1 Publication Order Number:
BD159/D
BD159G
Plastic Medium-Power
Silicon NPN Transistor
This device is designed for power output stages for television, radio,
phonograph and other consumer product applications.
Features
Suitable for Transformerless, LineOperated Equipment
High Power Dissipation Rating for High Reliability
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage V
CEO
350 Vdc
CollectorBase Voltage V
CB
375 Vdc
EmitterBase Voltage V
EB
5.0 Vdc
Collector Current Continuous I
C
0.5 Adc
Collector Current Peak I
CM
1.0 Adc
Base Current I
B
0.25 Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
20
0.16
W
mW/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase
R
q
JC
6.25
_C/W
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOLTS, 20 WATTS
www.onsemi.com
BD159G
TO225
(PbFree)
500 Units/Box
MARKING DIAGRAM
Y = Year
WW = Work Week
BD159 = Device Code
G = PbFree Package
3
BASE
1
EMITTER
COLLECTOR
2, 4
TO225
CASE 7709
STYLE 1
1
2
3
YWW
BD159G
BD159G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (I
C
= 1.0 mAdc, I
B
= 0) BV
CEO
350 Vdc
Collector Cutoff Current (at rated voltage) I
CBO
100
mAdc
Emitter Cutoff Current (V
EB
= 5.0 Vdc, I
C
= 0) I
EBO
100
mAdc
ON CHARACTERISTICS
DC Current Gain (I
C
= 50 mAdc, V
CE
= 10 Vdc) h
FE
30 240
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
25
20
15
10
5.0
0 20 40 60 80 100 120 140 160
Figure 1. PowerTemperature Derating Curve
T
C
, CASE TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
1.0
10
Figure 2. “On” Voltages
I
C
, COLLECTOR CURRENT (mA)
0.8
0.6
0.4
0.2
0
20 30 50 100 200 300 500
V
BE
@ V
CE
= 10 V
V
CE(sat)
@ I
C
/I
B
= 10
T
J
= + 25°C
V
BE
@ I
C
/I
B
= 10
I
C
/I
B
= 5.0
V, VOLTAGE (VOLTS)
1.0
10
Figure 3. DC Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.01
20 30 50 100 30
0
200
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.03
0.02
I
C
, COLLECTOR CURRENT (AMPS)
T
J
= 150°C
dc
500 ms
10 ms
1.0 ms
The Safe Operating Area Curves indicate I
C
V
CE
limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below, the maximum T
J
,
powertemperature derating must be observed for both
steady state and pulse power conditions.
Figure 4. Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
10
1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500
300
200
70
30
20
T
J
= 150°C
h
FE
, DC CURRENT GAIN
50
100
+ 100°C
+ 25°C
- 55°C
7.0 70
V
CE
= 10 V
V
CE
= 2.0 V
BD159G
www.onsemi.com
3
PACKAGE DIMENSIONS
TO225
CASE 7709
ISSUE AD
SCALE 1:1
DIM MIN MAX
MILLIMETERS
D 10.60 11.10
E 7.40 7.80
A 2.40 3.00
b 0.60 0.90
P 2.90 3.30
L1 1.27 2.54
c 0.39 0.63
L 14.50 16.63
b2 0.51 0.88
Q 3.80 4.20
A1 1.00 1.50
e 2.04 2.54
E
123
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
2X
2X
Q
D
L1
P
b2
b
e
c
L
A1
A
FRONT VIEW BACK VIEW
FRONT VIEW SIDE VIEW
1
2
3
3
2
1
4
PIN 4
BACKSIDE TAB
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
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USA/Canada
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Phone: 421 33 790 2910
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Phone: 81358171050
BD159/D
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Sales Representative

BD159

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 0.5A 350V 20W NPN
Lifecycle:
New from this manufacturer.
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