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VS-60CTQ150-N3

P1-P3P4-P6P7-P7
VS-60CTQ150PbF, VS-60CTQ150-N3
www.vishay.com
Vishay Semiconductors
Revision: 02-Jul-12
1
Document Number: 94240
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 30 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Designed and qualified according to JEDEC-JESD47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-60CTQ150... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
2 x 30 A
V
R
150 V
V
F
at I
F
0.72 V
I
RM
max. 20 mA at 125 °C
T
J
max. 175 °C
Diode variation Common cathode
E
AS
0.4 mJ
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 60 A
V
RRM
150 V
I
FSM
t
p
= 5 μs sine 710 A
V
F
30 A
pk
, T
J
= 125 °C (typical, per leg) 0.69 V
T
J
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-60CTQ150PbF VS-60CTQ150-N3 UNITS
Maximum DC reverse voltage V
R
150 150 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 137 °C, rectangular waveform
30
A
per device 60
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and
with rated V
RRM
applied
710
10 ms sine or 6 ms rect. pulse 270
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 0.9 A, L = 1 mH 0.4 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.9 A
VS-60CTQ150PbF, VS-60CTQ150-N3
www.vishay.com
Vishay Semiconductors
Revision: 02-Jul-12
2
Document Number: 94240
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP MAX. UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
30 A
T
J
= 25 °C
0.83 0.88
V
60 A 0.98 1.09
30 A
T
J
= 125 °C
0.67 0.72
60 A 0.82 0.87
Maximum reverse leakage current per leg
See fig. 2
I
RM
T
J
= 25 °C
V
R
= Rated V
R
775μA
T
J
= 125 °C 7.2 20 mA
Typical junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C - 650 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body -7.5nH
Maximum voltage rate of change dV/dt Rated V
R
- 10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 175 °C
Maximum thermal resistance,
junction to case
per leg
R
thJC
DC operation See fig. 4 1.2
°C/W
per package DC operation 0.6
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.25
Approximate weight
6g
0.21 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB 60CTQ150
VS-60CTQ150PbF, VS-60CTQ150-N3
www.vishay.com
Vishay Semiconductors
Revision: 02-Jul-12
3
Document Number: 94240
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
(Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
100
10
1000
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.6 0.8 1.0 1.2
2.01.4 1.6 1.8
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.001
1
10
100
0.1
0.01
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
4020 60 80
140
160
100 120
0
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
40 80
160
120
0
T
J
= 125 °C
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P7

VS-60CTQ150-N3

Mfr. #:
Buy VS-60CTQ150-N3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-60CTQ150-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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