©
Nexperia B.V. 2017. All rights reserved
9397 750 14587
Product data sheet Rev. 06 — 4 April 2005 3 of 8
Nexperia
1PSxSB17
4 V, 30 mA low C
d
Schottky barrier diode
6. Thermal characteristics
[1] For Schottky barrier diodes, thermal run-away has to be considered as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
[2] Refer to SOD323 (SC-76) standard mounting conditions.
[3] Refer to SOD523 (SC-79) standard mounting conditions.
[4] Refer to SOT666 standard mounting conditions.
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 6: Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction to
ambient;
in free air
[1]
SOD323
[2]
- - 450 K/W
SOD523
[3]
- - 450 K/W
SOT666
[4]
- - 700 K/W
Table 8: Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage see Figure 1;
[1]
I
F
= 0.1 mA - 300 350 mV
I
F
= 1 mA - 360 450 mV
I
F
= 10 mA - 470 600 mV
I
R
reverse current V
R
= 3 V; see Figure 2 - - 250 nA
C
d
diode
capacitance
see Figure 3;
V
R
= 0 V; f = 1 MHz - 0.8 1 pF
V
R
= 0.5 V; f = 1 MHz - 0.65 - pF
