BAP70-03 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 6 — 7 March 2014 2 of 8
NXP Semiconductors
BAP70-03
Silicon PIN diode
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage continuous voltage - 50 V
I
F
forward current continuous current - 100 mA
P
tot
total power dissipation T
sp
=90C - 500 mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature 65 +150 C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction
to solder point
120 K/W
Table 6. Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
=50mA - 0.9 1.1 V
I
R
reverse current V
R
= 50 V - - 100 nA
C
d
diode capacitance see Figure 1; f = 1 MHz;
V
R
=0V - 570 - fF
V
R
=1V - 400 - fF
V
R
=5V - 270 - fF
V
R
= 20 V - 200 250 fF
r
D
diode forward resistance see Figure 2; f = 100 MHz;
I
F
= 0.5 mA - 77 100
I
F
=1mA - 40 50
I
F
=10mA - 5.4 7
I
F
=100mA - 1.4 1.9
L
charge carrier life time when switched from I
F
=10mA to
I
R
=6mA; R
L
= 100 ; measured at
I
R
=3mA
-1.25-s
L
S
series inductance I
F
= 100 mA; f = 100 MHz - 1.5 - nH
