VS-STPS40L40CWPbF, VS-STPS40L40CW-N3
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Vishay Semiconductors
Revision: 30-Aug-11
1
Document Number: 94332
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Schottky Rectifier, 2 x 20 A
FEATURES
• 150 °C T
J
operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-STPS40L40CW... center tap Schottky rectifier has
been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies,
converters, freewheeling diodes, and reverse battery
protection.
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
2 x 20 A
V
R
40 V
V
F
at I
F
0.43 V
I
RM
max. 60 mA at 100 °C
T
J
max. 150 °C
Diode variation Common cathode
E
AS
27 mJ
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 40 A
V
RRM
40 V
I
FSM
t
p
= 5 μs sine 3500 A
V
F
20 Apk, T
J
= 125 °C (per leg) 0.43 V
T
J
- 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-STPS40L40CWPbF VS-STPS40L40CW-N3 UNITS
Maximum DC reverse voltage V
R
40 40 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 120 °C, rectangular waveform 40
A
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
3500
10 ms sine or 6 ms rect. pulse 430
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 4 A, L = 3.4 mH 27 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
4A
