25TTS12STRL

Document Number: 93704 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 20-Jun-08 1
Surface Mountable Phase
Control SCR, 16 A
25TTS...S High Voltage Series
Vishay High Power Products
DESCRIPTION/FEATURES
The 25TTS...S High Voltage Series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.
This product has been designed and qualified for industrial
level.
Note
•T
A
= 55 °C, T
J
= 125 °C, footprint 300 mm
2
PRODUCT SUMMARY
V
T
at 16 A < 1.25 V
I
TSM
300 A
V
RRM
800 to 1600 V
D
2
PA K
Gate
2
Anode
Cathode
1
3
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 µm) copper
3.5 5.5
A
Aluminum IMS, R
thCA
= 15 °C/W 8.5 13.5
Aluminum IMS with heatsink, R
thCA
= 5 °C/W 16.5 25.0
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
Sinusoidal waveform 16
A
I
RMS
25
V
RRM
/V
DRM
800 to 1600 V
I
TSM
300 A
V
T
16 A, T
J
= 25 °C 1.25 V
dV/dt 500 V/µs
dI/dt 150 A/µs
T
J
- 40 to 125 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
I
RRM
/I
DRM
,
AT 125 °C
mA
25TTS08S 800 800
10
25TTS12S 1200 1200
25TTS16S 1600 1600
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93704
2 Revision: 20-Jun-08
25TTS...S High Voltage Series
Vishay High Power Products
Surface Mountable Phase
Control SCR, 16 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
TYP. MAX.
Maximum average on-state current I
T(AV)
T
C
= 93 °C, 180° conduction half sine wave 16
A
Maximum RMS on-state current I
RMS
25
Maximum peak, one-cycle,
non-repetitive surge current
I
TSM
10 ms sine pulse, rated V
RRM
applied 300
10 ms sine pulse, no voltage reapplied 350
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 450
A
2
s
10 ms sine pulse, no voltage reapplied 630
Maximum I
2
t for fusing I
2
t t = 0.1 to 10 ms, no voltage reapplied 6300 A
2
s
Maximum on-state voltage drop V
TM
16 A, T
J
= 25 °C 1.25 V
On-state slope resistance r
t
T
J
= 125 °C
12.0 mΩ
Threshold voltage V
T(TO)
1.0 V
Maximum reverse and direct leakage current I
RM
/I
DM
T
J
= 25 °C
V
R
= Rated V
RRM
/V
DRM
0.5
mA
T
J
= 125 °C 10
Holding current I
H
25TTS08, 25TTS12
Anode supply = 6 V,
resistive load, initial I
T
= 1 A
- 100
25TTS16 100 150
Maximum latching current I
L
Anode supply = 6 V, resistive load 200
Maximum rate of rise of off-state voltage dV/dt 500 V/µs
Maximum rate of rise of turned-on current dI/dt 150 A/µs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
8.0
W
Maximum average gate power P
G(AV)
2.0
Maximum peak positive gate current + I
GM
1.5 A
Maximum peak negative gate voltage - V
GM
10 V
Maximum required DC gate current to trigger I
GT
Anode supply = 6 V, resistive load, T
J
= - 10 °C 60
mAAnode supply = 6 V, resistive load, T
J
= 25 °C 45
Anode supply = 6 V, resistive load, T
J
= 125 °C 20
Maximum required DC gate voltage
to trigger
V
GT
Anode supply = 6 V, resistive load, T
J
= - 10 °C 2.5
V
Anode supply = 6 V, resistive load, T
J
= 25 °C 2.0
Anode supply = 6 V, resistive load, T
J
= 125 °C 1.0
Maximum DC gate voltage not to trigger V
GD
T
J
= 125 °C, V
DRM
= Rated value
0.25
Maximum DC gate current not to trigger I
GD
2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time t
gt
T
J
= 25 °C 0.9
µsTypical reverse recovery time t
rr
T
J
= 125 °C
4
Typical turn-off time t
q
110
Document Number: 93704 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 20-Jun-08 3
25TTS...S High Voltage Series
Surface Mountable Phase
Control SCR, 16 A
Vishay High Power Products
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 µm] copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 40 to 125
°C
Soldering temperature T
S
For 10 s (1.6 mm from case) 240
Maximum thermal resistance,
junction to case
R
thJC
DC operation 1.1
°C/W
Typical thermal resistance,
junction to ambient (PCB mount)
R
thJA
(1)
40
Approximate weight
2g
0.07 oz.
Marking device Case style D
2
PAK (SMD-220)
25TTS08S
25TTS12S
25TTS16S

25TTS12STRL

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
SCRs RECOMMENDED ALT 78-VS-25TTS12STRL-M3
Lifecycle:
New from this manufacturer.
Delivery:
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