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SI4816DY-T1-GE3

P1-P3P4-P6P7-P9
Vishay Siliconix
Si4816DY
Document Number: 71121
S09-0868-Rev. G, 18-May-09
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT
®
Plus Power MOSFET
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
Channel-1
30
0.022 at V
GS
= 10 V
6.3
0.030 at V
GS
= 4.5 V
5.4
Channel-2
0.013 at V
GS
= 10 V
10
0.0185 at V
GS
= 4.5 V
8.6
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(V)
Diode Forward Voltage
I
F
(A)
30 0.50 V at 1.0 A 2.0
G
1
D
1
A/S
2
D
2
/S
1
A/S
2
D
2
/S
1
G
2
D
2
/S
1
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4816DY-T1-E3 (Lead (Pb)-free)
Si4816DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
2
S
2
N-Channel 2
MOSFET
Schottky Diode
A
G
1
D
1
N-Channel 1
MOSFET
S
1
/D
2
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Starting date code W46BAA.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol
Channel-1 Channel-2
Unit
10 s Steady State 10 s Steady State
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
6.3 5.3 10 7.7
A
T
A
= 70 °C
5.4 4.2 8.2 6.2
Pulsed Drain Current
I
DM
30 40
Continuous Source Current (Diode Conduction)
a
I
S
1.3 0.9 2.2 1.15
Avalanche Current
b
L = 0.1 mH
I
AS
12 25
Single Pulse Avalanche Energy
b
E
AS
7.2 31.25 mJ
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
1.4 1.0 2.4 1.25
W
T
A
= 70 °C
0.9 0.64 1.5 0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol
Channel-1 Channel-2 Schottky
Unit
Typ. Max. Typ. Max. Typ. Max.
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
72 90 43 53 48 60
°C/W
Steady State 100 125 82 100 80 100
Maximum Junction-to-Foot (Drain) Steady State
R
thJC
51 63 25 30 28 35
www.vishay.com
2
Document Number: 71121
S09-0868-Rev. G, 18-May-09
Vishay Siliconix
Si4816DY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MOSFET SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min.
Typ.
a
Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
Ch-1 0.8 2
V
Ch-2 1.0 3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= 20 V
Ch-1 100
nA
Ch-2 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
Ch-1 1
µA
Ch-2 100
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 °C
Ch-1 15
Ch-2 2000
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
Ch-1 20
A
Ch-2 30
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 6.3 A
Ch-1 0.018 0.022
Ω
V
GS
= 10 V, I
D
= 10 A
Ch-2 0.0105 0.013
V
GS
= 4.5 V, I
D
= 5.4 A
Ch-1 0.024 0.030
V
GS
= 4.5 V, I
D
= 8.6 A
Ch-2 0.015 0.0185
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 6.3 A
Ch-1 17
S
V
DS
= 15 V, I
D
= 10 A
Ch-2 28
Diode Forward Voltage
b
V
SD
I
S
= 1.3 A V, V
GS
= 0 V
Ch-1 0.7 1.1
V
I
S
= 1 A V, V
GS
= 0 V
Ch-2 0.47 0.5
Dynamic
a
Total Gate Charge
Q
g
Channel-1
V
DS
= 15 V, V
GS
= 5 V, I
D
= 6.3 A
Channel-2
V
DS
= 15 V, V
GS
= 5 V, I
D
= - 10 A
Ch-1 8.0 12
nC
Ch-2 15 23
Gate-Source Charge
Q
gs
Ch-1 1.75
Ch-2 5.3
Gate-Drain Charge
Q
gd
Ch-1 3.2
Ch-2 4.6
Gate Resistance
R
g
Ch-1 1.5 6.1
Ω
Ch-2 0.5 2.6
Tur n - O n D e l ay Time
t
d(on)
Channel-1
V
DD
= 15 V, R
L
= 15 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
g
= 6 Ω
Channel-2
V
DD
= 15 V, R
L
= 15 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
g
= 6 Ω
Ch-1 10 20
ns
Ch-2 15 30
Rise Time
t
r
Ch-1 5 10
Ch-2 5 10
Turn-Off Delay Time
t
d(off)
Ch-1 26 50
Ch-2 44 80
Fall Time
t
f
Ch-1 8 16
Ch-2 12 24
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.3 A, dI/dt = 100 A/µs
Ch-1 30 60
I
F
= 2.2 A, dI/dt = 100 µA/µs
Ch-2 32 70
SCHOTTKY SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Forward Voltage Drop
V
F
I
F
= 1.0 A
0.47 0.50
V
I
F
= 1.0 A, T
J
= 125 °C
0.36 0.42
Maximum Reverse Leakage Current
I
rm
V
R
= 30 V
0.004 0.100
mA
V
R
= 30 V, T
J
= 100 °C
0.7 10
V
R
= - 30 V, T
J
= 125 °C
3.0 20
Junction Capacitance C
T
V
R
= 10 V
50 pF
Document Number: 71121
S09-0868-Rev. G, 18-May-09
www.vishay.com
3
Vishay Siliconix
Si4816DY
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
6
12
18
24
30
02468 10
V
GS
= 10 V thru 4 V
3 V
V
DS
- Drain-to-Source Voltage (V)
) A ( t n e r r u C n i a r D - I
D
2 V
1 V
0.000
0.006
0.012
0.018
0.024
0.030
0 8 16 24 32 40
(Ω) ecnats
is
eR-nO
-
R
)no(SD
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 3 6 9 12 15
V
DS
= 15 V
I
D
= 6.3 A
)
V
(
e
g
a
t
l
o
V
e
c
r
u
o
S -
o
t
-
e
t
a
G
-
Q
g
- Total Gate Charge (nC)
V
SG
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
6
12
18
24
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
)A( tnerruC niarD -I
D
0
200
400
600
800
1000
061218 24 30
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
)Fp( ecnatic
a
paC - C
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 6.3 A
T
J
- Junction Temperature (°C)
R
)
no
(
S
D
e
c
n
a
t
s i s
e
R
-
n O
-
)
d
ez
i
l
a
mroN(
P1-P3P4-P6P7-P9

SI4816DY-T1-GE3

Mfr. #:
Buy SI4816DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3
Lifecycle:
New from this manufacturer.
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