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BUK9514-55A,127
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK9514-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 7 February 201
1
6 of 13
NXP Semiconductors
BUK9514-55A
N-channel T
renchMOS logic level FET
Fig 5.
Output charac
teristics: drain curren
t as a
function of drain-source voltage; typica
l values
Fig 6.
Drain-source on
-state resistance as a function
of gate-source voltage; typical value
s
Fig 7.
Sub-threshold d
rain current as a function of
gate-source voltage
Fig 8.
Forwar
d transconductanc
e as a function of
drain current; typi
cal values
03nd63
0
100
200
300
0246
8
1
0
V
DS
(V)
I
D
(A)
2.2
3
4
5
6
7
8
9
V
GS
(V) = 10
03nd62
8
10
12
14
16
2468
1
0
V
GS
(V)
R
DSon
(m
Ω
)
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
max
ty
p
min
03nd60
0
20
40
60
02
0
4
0
6
0
8
0
I
D
(A)
g
fs
(S)
BUK9514-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 7 February 201
1
7 of 13
NXP Semiconductors
BUK9514-55A
N-channel T
renchMOS logic level FET
Fig 9.
Transfer characteristics: drain cu
rrent as a
function of gate-source voltag
e; typical values
Fig 10.
Gate-source voltage as a function of gate
charge; typical values
Fig 11.
Gate-source
threshold
voltage as a function
of
junction temperature
Fig 12.
Drain-source on-state resistanc
e as a function
of drain current; typical values
03nd61
0
20
40
60
80
0123
4
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
T
j
= 25
°
C
03nd59
0
1
2
3
4
5
02
0
4
0
6
0
Q
G
(nC)
V
GS
(V)
V
DD
= 44 V
V
DD
= 14 V
03aa33
0
0.
5
1
1.
5
2
2.
5
-
60
0
60
120
180
T
j
(
°
C)
V
GS(t
h)
(V)
max
ty
p
min
03nd64
0
10
20
30
0
50
100
150
200
250
I
D
(A)
R
DSon
(m
Ω
)
3.2
3.6
3.8
4
5
V
GS
(V) = 3
3.4
BUK9514-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 7 February 201
1
8 of 13
NXP Semiconductors
BUK9514-55A
N-channel T
renchMOS logic level FET
Fig 13.
Normalized drain-source on-state resistance
factor as a
function of junctio
n temperature
Fig
14.
Input, outp
ut and reverse trans
fer capacitances
as a function of d
rain-source voltage; ty
pical
values
Fig 15.
Reverse diode curren
t as a function of revers
e diode voltage; typical valu
es
T
j
(
°
C)
−
60
180
120
06
0
03aa28
1.2
0.6
1.8
2.4
a
0
03nd65
0
1000
2000
3000
4000
5000
6000
7000
10
−
2
10
−
1
1
10
10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
03nd58
0
20
40
60
80
100
0
0.5
1.0
1.5
V
SD
(V)
I
S
(A)
T
j
= 175
°
C
T
j
= 25
°
C
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK9514-55A,127
Mfr. #:
Buy BUK9514-55A,127
Manufacturer:
Nexperia
Description:
RF Bipolar Transistors MOSFET RAIL PWR-MOS
Lifecycle:
New from this manufacturer.
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BUK9514-55A,127