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BAS21QAZ
P1-P3
P4-P6
P7-P9
P10-P11
Nexperia
BAS21QA
High-voltage switching diode
aaa-027994
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.50
0.33
0.25
0.05
0.10
0.20
0.02
0.01
0
FR4 PCB, standard footprint
Fig. 2.
T
ransient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-027995
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.05
0.10
0.20
0.25
0.33
0.50
0.75
0.01
0
0.02
FR4 PCB, mounting pad for cathode 1 cm
2
Fig. 3.
T
ransient thermal impedance from junction to ambient as a function of pulse duration; typical values
BAS21QA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V
. 2018. All rights reserved
Product data sheet
9 April 2018
4 / 11
Nexperia
BAS21QA
High-voltage switching diode
10. Characteristics
T
able 7. Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
I
F
= 100 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
-
-
1
V
V
F
forward voltage
I
F
= 200 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
-
-
1.25
V
V
R
= 200 V; pulsed; T
j
= 25 °C
-
-
100
nA
I
R
reverse current
V
R
= 200 V; pulsed; T
j
= 150 °C
-
-
100
µA
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz; T
j
= 25 °C
-
-
2
pF
t
rr
reverse recovery time
I
F
= 30 mA; I
R
= 30 mA; R
L
= 100 Ω;
I
R(meas)
= 3 mA; T
j
= 25 °C
-
-
50
ns
V
F
(V)
0
1.6
1.2
0.4
0.8
006aab212
200
400
600
I
F
(mA)
0
(1)
(3)
(4)
(2)
(1) T
amb
= 150° C
(2) T
amb
= 85° C
(3) T
amb
= 25° C
(4) T
amb
= -40° C
Fig. 4.
Forward current as a function of forward
voltage; typical values
aaa-028237
10
-2
10
-3
10
-1
1
I
F
(A)
10
-4
V
F
(V)
0
1.75
1.25
1.50
1.00
0.75
0.25
0.50
(1)
(2)
(3)
(4)
(1) T
j
= 150° C
(2) T
j
= 85° C
(3) T
j
= 25° C
(4) T
j
= -40° C
Fig. 5.
Forward current as a function of forward
voltage; typical values; (logarithmic scale)
BAS21QA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V
. 2018. All rights reserved
Product data sheet
9 April 2018
5 / 11
Nexperia
BAS21QA
High-voltage switching diode
006aab213
10
2
I
R
(µA)
V
R
(V)
0
250
200
100
150
50
10
1
10
-1
10
-2
10
-3
10
-4
10
-5
(4)
(1)
(2)
(3)
(1) T
amb
= 150° C
(2) T
amb
= 85° C
(3) T
amb
= 25° C
(4) T
amb
= -40° C
Fig. 6.
Reverse current as a function of reverse
voltage; typical values
mbg447
0
4
8
6
2
V
R
(V)
1.0
0.8
0.2
0.6
0.4
C
d
(pF)
f = 1 MHz
T
j
= 25 °C.
Fig. 7.
Diode capacitance as a function of reverse
voltage; typical values.
mbg703
10
1
10
2
I
FSM
(A)
10
- 1
t
p
(µs)
1
1
0
4
10
3
10
1
0
2
Based on square wave currents.
T
j(init)
= 25 °C
Fig. 8.
Non-repetitive peak forward current as a function of pulse duration; maximum values
BAS21QA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V
. 2018. All rights reserved
Product data sheet
9 April 2018
6 / 11
P1-P3
P4-P6
P7-P9
P10-P11
BAS21QAZ
Mfr. #:
Buy BAS21QAZ
Manufacturer:
Nexperia
Description:
Diodes - General Purpose, Power, Switching BAS21QA DFN1010D-3
Lifecycle:
New from this manufacturer.
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