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OP262TRZ-EP

P1-P3P4-P6P7-P9P10-P12
OP262-EP
Rev. 0 | Page 4 of 12
V
S
= 3.0 V, V
CM
= 0 V, T
A
= 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
50 325 μV
−55°C ≤ T
A
≤ +125°C 1 mV
Input Bias Current I
B
360 600 nA
Input Offset Current I
OS
±2.5 ±25 nA
Input Voltage Range V
CM
0 2 V
Common-Mode Rejection CMRR 0 V ≤ V
CM
≤ 2.0 V, −55°C ≤ T
A
≤ +125°C 70 110 dB
Large Signal Voltage Gain A
VO
R
L
= 2 kΩ, 0.5 V ≤ V
OUT
≤ 2.5 V 20 V/mV
R
L
= 10 kΩ, 0.5 V ≤ V
OUT
≤ 2.5 V 20 30 V/mV
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
I
L
= 250 μA 2.95 2.99 V
I
L
= 5 mA 2.85 2.93 V
Output Voltage Swing Low V
OL
I
L
= 250 μA 14 50 mV
I
L
= 5 mA 66 150 mV
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= 2.7 V to 7 V 110 dB
−55°C ≤ T
A
≤ +125°C 60 dB
Supply Current/Amplifier I
SY
V
OUT
= 1.5 V 500 650 μA
−55°C ≤ T
A
≤ +125°C 850 μA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 10 kΩ 10 V/μs
Settling Time t
S
To 0.1%, A
V
= −1, V
O
= 2 V step 575 ns
Gain Bandwidth Product GBP 15 MHz
Phase Margin φ
m
59 Degrees
NOISE PERFORMANCE
Voltage Noise e
n
p-p 0.1 Hz to 10 Hz 0.5 μV p-p
Voltage Noise Density e
n
f = 1 kHz 9.5 nV/√Hz
Current Noise Density i
n
f = 1 kHz 0.4 pA/√Hz
OP262-EP
Rev. 0 | Page 5 of 12
V
S
= ±5.0 V, V
CM
= 0 V, T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
25 325 μV
−55°C ≤ T
A
≤ +125°C 1 mV
Input Bias Current I
B
260 500 nA
−55°C ≤ T
A
≤ +125°C 650 nA
Input Offset Current I
OS
±2.5 ±25 nA
−55°C ≤ T
A
≤ +125°C ±40 nA
Input Voltage Range V
CM
−5 +4 V
Common-Mode Rejection CMRR −4.9 V ≤ V
CM
≤ +4.0 V, −55°C ≤ T
A
≤ +125°C 70 110 dB
Large Signal Voltage Gain A
VO
R
L
= 2 kΩ, –4.5 V ≤ V
OUT
≤ +4.5 V 35 V/mV
R
L
= 10 kΩ, –4.5 V ≤ V
OUT
≤ +4.5 V 75 120 V/mV
−55°C ≤ T
A
≤ +125°C 25 V/mV
Long-Term Offset Voltage
1
V
OS
600 μV
Offset Voltage Drift
2
ΔV
OS
/ΔT 1 μV/°C
Bias Current Drift ΔI
B
/ΔT 250 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
I
L
= 250 μA, −55°C ≤ T
A
≤ +125°C 4.95 4.99 V
I
L
= 5 mA 4.85 4.94 V
Output Voltage Swing Low V
OL
I
L
= 250 μA, −55°C ≤ T
A
≤ +125°C −4.99 −4.95 V
I
L
= 5 mA −4.94 −4.85 V
Short-Circuit Current I
SC
Short to ground ±80 mA
Maximum Output Current I
OUT
±30 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= ±1.35 V to ±6 V 110 dB
−55°C ≤ T
A
≤ +125°C 60 dB
Supply Current/Amplifier I
SY
V
OUT
= 0 V 650 800 μA
−55°C ≤ T
A
≤ +125°C 1.15 mA
V
OUT
= 0 V 550 775 μA
−55°C ≤ T
A
≤ +125°C 1 mA
Supply Voltage Range V
S
3.0 (±1.5) 12 (±6) V
DYNAMIC PERFORMANCE
Slew Rate SR −4 V < V
OUT
< +4 V, R
L
= 10 kΩ 13 V/μs
Settling Time t
S
To 0.1%, A
V
= −1, V
O
= 2 V step 475 ns
Gain Bandwidth Product GBP 15 MHz
Phase Margin φ
m
64 Degrees
NOISE PERFORMANCE
Voltage Noise e
n
p-p 0.1 Hz to 10 Hz 0.5 μV p-p
Voltage Noise Density e
n
f = 1 kHz 9.5 nV/√Hz
Current Noise Density i
n
f = 1 kHz 0.4 pA/√Hz
1
Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125°C, with an LTPD of 1.3.
2
Offset voltage drift is the average of the −55°C to +25°C delta and the +25°C to +125°C delta.
OP262-EP
Rev. 0 | Page 6 of 12
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Min
Supply Voltage ±6 V
Input Voltage
1
±6 V
Differential Input Voltage
2
±0.6 V
Internal Power Dissipation
SOIC (S) Observe Derating Curves
Output Short-Circuit Duration Observe Derating Curves
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −55°C to +125°C
Junction Temperature Range −65°C to +150°C
Lead Temperature Range,
(Soldering, 10 sec) 300°C
1
For supply voltages greater than 6 V, the input voltage is limited to less than
or equal to the supply voltage.
2
For differential input voltages greater than 0.6 V, the input current should be
limited to less than 5 mA to prevent degradation or destruction of the input
devices.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Table 5.
Package Type
θ
JA
1
θ
JC
Unit
8-Lead SOIC (R) 157 56 °C/W
1
θ
JA
is specified for the worst-case conditions, that is, θ
JA
is specified for a
device soldered in circuit board for SOIC package.
ESD CAUTION
P1-P3P4-P6P7-P9P10-P12

OP262TRZ-EP

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Manufacturer:
Analog Devices Inc.
Description:
Operational Amplifiers - Op Amps EP 15 MHZ RR DUAL IC
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