SIP32508DT-T1-GE3

SiP32508, SiP32509
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Vishay Siliconix
S16-0319-Rev. B, 29-Feb-16
7
Document Number: 62754
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TYPICAL WAVEFORMS
Fig. 19 - Typical Turn-On Delay, Rise Time
C
OUT
= 0.1 μF, C
IN
= 4.7 μF, I
OUT
= 1.5 A
Fig. 20 - Typical Turn-On Delay, Rise Time
C
OUT
= 0.1 μF, C
IN
= 4.7 μF, R
OUT
= 10
Fig. 21 - Typical Turn-On Delay, Rise Time
C
OUT
= 200 μF, C
IN
= 4.7 μF, I
OUT
= 1.5 A
Fig. 22 - Typical Fall Time
C
OUT
= 0.1 μF, C
IN
= 4.7 μF, I
OUT
= 1.5 A
Fig. 23 - Typical Fall Time
C
OUT
= 0.1 μF, C
IN
= 4.7 μF, R
OUT
= 10
Fig. 24 - Typical Fall Time
C
OUT
= 200 μF, C
IN
= 4.7 μF, I
OUT
= 1.5 A
EN
5V
OUT
3.6V
OUT
1.5V
OUT
I
OUT
for 5V
OUT
I
OUT
for 3.6V
OUT
I
OUT
for 1.5V
OUT
2 V/Div, 2 A/Div, 2 ms/Div
5V
OUT
EN
1.5V
OUT
I
OUT
for 5V
OUT
I
OUT
for 3.6V
OUT
I
OUT
for 1.5V
OUT
3.6V
OUT
2 V/Div, 0.25 A/Div, 2 ms/Div
EN
5V
OUT
I
OUT
for 5V
OUT
3.6V
OUT
I
OUT
for 3.6V
OUT
1.5V
OUT
I
OUT
for 1.5V
OUT
2 V/Div, 2 A/Div, 2 ms/Div
2 V/Div, 2 A/Div, 2 s/Div
EN
5V
OUT
3.6V
OUT
1.5V
OUT
I
OUT
for 5V
OUT
I
OUT
for 3.6V
OUT
I
OUT
for 1.5V
OUT
EN
5V
OUT
3.6VOUT
1.5VOUT
IOUT for 5VOUT
IOUT for 3.6VOUT
I
OUT
for 1.5V
OUT
2 V/Div, 0.25 A/Div, 2 s/Div
EN
5V
OUT
I
OUT
for 5V
OUT
3.6V
OUT
I
OUT
for 3.6V
OUT
1.5V
OUT
I
OUT
for 1.5V
OUT
2 V/Div, 2 A/Div, 2 ms/Div
SiP32508, SiP32509
www.vishay.com
Vishay Siliconix
S16-0319-Rev. B, 29-Feb-16
8
Document Number: 62754
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 25 - Typical Turn-On Delay, Rise Time
C
OUT
= 200 μF, C
IN
= 4.7 μF, R
OUT
= 10
Fig. 26 - Typical Fall Time
C
OUT
= 200 μF, C
IN
= 4.7 μF, R
OUT
= 10
DETAILED DESCRIPTION
SiP32508 and SiP32509 are advanced slew rate controlled
high side load switches consisted of a n-channel power
switches. When a device is enable the gate of the power
switch is turned on at a controlled rate to avoid excessive
in-rush current. Once fully on the gate to source voltage of
the power switch is biased at a constant level. The design
gives a flat on resistance throughout the operating voltages.
When the device is off, the reverse blocking circuitry
prevents current from flowing back to input if output is
raised higher than input. The reverse blocking mechanism
also works in case of no input applied.
APPLICATION INFORMATION
Input Capacitor
SiP32508 and SiP32509 do not require input capacitor. To
limit the voltage drop on the input supply caused by
transient inrush currents, a input bypass capacitor is
recommended. A 2.2 µF ceramic capacitor placed as close
to the V
IN
and GND should be enough. Higher values
capacitor can help to further reduce the voltage drop.
Ceramic capacitors are recommended for their ability to
withstand input current surge from low impedance sources
such as batteries in portable devices.
Output Capacitor
While these devices work without an output capacitor,
an 0.1 µF or larger capacitor across V
OUT
and GND is
recommended to accommodate load transient condition. It
also helps preventing parasitic inductance from forcing V
OUT
below GND when switching off. Output capacitor has
minimal affect on device’s turn on slew rate time. There is no
requirement on capacitor type and its ESR.
Enable
The EN pin is compatible with both TTL and CMOS logic
voltage levels. Enable pin voltage can be above IN once it is
within the absolute maximum rating range.
Protection Against Reverse Voltage Condition
Both SiP32508 and SiP32509 contain reverse blocking
circuitry to protect the current from going to the input from
the output in case where the output voltage is higher than
the input voltage when the main switch is off. Reverse
blocking works for input voltage as low as 0 V.
Thermal Considerations
SiP32508 and SiP32509 are designed to maintain a
constant output load current. Due to physical limitations of
the layout and assembly of the device the maximum switch
current is 3 A, as stated in the Absolute Maximum Ratings
table. However, another limiting characteristic for the safe
operating load current is the thermal power dissipation of
the package. To obtain the highest power dissipation (and a
thermal resistance of 150 °C/W) the IN and OUT pins of the
device should be connected to heat sinks on the printed
circuit board. Figure 27 shows a demo board layout. All
copper traces and vias for the IN and OUT pins should be
sized adequately to carry the maximum continuous current.
The maximum power dissipation in any application is
dependant on the maximum junction temperature,
T
J
(max.) = 125 °C, the junction-to-ambient thermal
resistance for the TSOT23-6 package,
J-A
= 150 °C/W, and
the ambient temperature, T
A
, which may be formulaically
expressed as:
EN
5V
OUT
I
OUT
for 5V
OUT
3.6V
OUT
I
OUT
for 3.6V
OUT
1.5V
OUT
I
OUT
for 1.5V
OUT
2 V/Div, 0.25 A/Div, 2 ms/Div
EN
5V
OUT
I
OUT
for 5V
OUT
3.6V
OUT
I
OUT
for 3.6V
OUT
1.5V
OUT
I
OUT
for 1.5V
OUT
2 V/Div, 0.25 A/Div, 2 ms/Div
150
125
(max.)
(max.)
A
A
J
A
J
T
TT
P
-
=
-
=
-
θ
SiP32508, SiP32509
www.vishay.com
Vishay Siliconix
S16-0319-Rev. B, 29-Feb-16
9
Document Number: 62754
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
It then follows that, assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to
about 367 mW.
So long as the load current is below the 3 A limit, the
maximum continuous switch current becomes a function of
two things: the package power dissipation and the R
DS(on)
at
the ambient temperature.
As an example let us calculate the worst case maximum
load current at T
A
= 70 °C. The worst case R
DS(on)
at 25 °C
occurs at an input voltage of 1.2 V and is equal to 55 m.
The R
DS(on)
at 70 °C can be extrapolated from this data using
the following formula:
R
DS(on)
(at 70 °C) = R
DS(on)
(at 25 °C) x (1 + T
C
x DT)
Where T
C
is 3570 ppm/°C. Continuing with the calculation
we have
R
DS(on)
(at 70 °C) = 52 m x (1 + 0.00357 x (70 °C - 25 °C)) =
60 m
The maximum current limit is then determined by
which in this case is 2.4 A. Under the stated input voltage
condition, if the 2.4 A current limit is exceeded the internal
die temperature will rise and eventually, possibly damage
the device.
Active EN Pull Down for Reverse Blocking
When an internal circuit detects the condition of V
OUT
0.8 V
higher than V
IN
, it will turn on the pull down circuit connected
to EN, forcing the switching OFF. The pull down value is
about 1 k.
Pulse Current Capability
The device is mounted on the evaluation board shown in the
PCB layout section. It is loaded with pulses of 5 A and 1 ms
for periods of 4.6 ms.
The SiP32508 and SiP32509 can safely support 5 A pulse
current repetitively at 25 °C.
Switch Non-Repetitive Pulsed Current
The SiP32508 and SiP32509 can withstand inrush current of
up to 12 A for 100 µs at 25 °C when heavy capacitive loads
are connected and the part is already enabled.
Recommended Board Layout
For the best performance, all traces should be as short as
possible to minimize the inductance and parasitic effects.
The input and output capacitors should be kept as close
as possible to the input and output pins respectively.
Using wide traces for input, output, and GND to reducing
the case to ambient thermal impedance.
Fig. 27 - Demo Board Layout
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.
) (
(max.)
(max.)
ON DS
LOAD
R
P
I <
IN
EN
OUT
Reverse
Blocking
Charge
Pump
Control Logic
Input Buffer
Pull Down
Circuit
Control and Drive
V
OUT
> V
IN
Detect
When V
OUT
is 0.8 V above the V
IN
, pull down circuit
will be activated. It connects the EN to GND with a
resistance of around 1 kΩ.
5 A
1 ms
180 mA
4.6 ms

SIP32508DT-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Power Switch ICs - Power Distribution Slew Rate Controlled Load Switch
Lifecycle:
New from this manufacturer.
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