VS-80APS..PbF Series, VS-80APS..-M3 Series
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Vishay Semiconductors
Revision: 11-Feb-16
1
Document Number: 93794
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High Voltage, Input Rectifier Diode, 80 A
FEATURES
• Very low forward voltage drop
• 150 °C max. operating junction temperature
• Glass passivated pellet chip junction
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
80 A
V
R
800 V to 1200 V
V
F
at I
F
1.17 V
I
FSM
1500 A
T
J
max. 150 °C
Diode variation Single die
Base
cathode
+
2
13
node
--
Anode
TO-247AC
1
2
3
Available
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Sinusoidal waveform 80 A
V
RRM
Range 800/1200 V
I
FSM
1500 A
V
F
80 A, T
J
= 25 °C 1.17 V
T
J
-40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-80APS08PbF, VS-80APS08-M3 800 900
1.5
VS-80APS12PbF, VS-80APS12-M3 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 100 °C, 180° conduction half sine wave 80
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 1450
10 ms sine pulse, no voltage reapplied 1500
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 10 500
A
2
s
10 ms sine pulse, no voltage reapplied 14 000
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 140 000 A
2
s
