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VS-ST280S04P1V

P1-P3P4-P6P7-P8
VS-ST280S Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Mar-14
4
Document Number: 94402
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
80
90
100
110
120
130
0 50 100 150 200 250 300
Maximum Allowable Case Temperature (°C)
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
ST2 8 0S Se r i e s
R (DC) = 0.105 K/ W
thJC
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400 450
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
ST2 8 0S Se r i e s
R (DC) = 0.105 K/ W
thJC
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
1
K
/
W
-
D
e
l
t
a
R
0
.
1
6
K
/
W
0
.
2
K
/
W
0
.
2
5
K
/
W
0
.
3
K
/
W
0
.
4
K
/
W
0
.
6
K
/
W
0
.
8
K
/
W
1
.
2
K
/
W
t
h
S
A
0
50
100
150
200
250
300
350
0
50 100 150 200 250 300
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Angle
Maximum Average On-state Power Loss (W)
Ave ra ge On-st a te Current ( A)
ST280S Series
T = 125°C
J
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
0
3
K
/
W
-
D
e
l
t
a
R
0
.
0
6
K
/
W
0
.
0
8
K
/
W
0
.
1
2
K
/
W
0
.
1
6
K
/
W
0
.
2
K
/
W
0
.
3
K
/
W
0
.
4
K
/
W
t
h
S
A
0
.
6
K
/
W
1
K
/
W
0
50
100
150
200
250
300
350
400
450
500
0 50 100150200250300350400450
DC
180°
120°
90°
60°
30°
RM S Lim i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST280S Series
T = 1 2 5 ° C
J
VS-ST280S Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Mar-14
5
Document Number: 94402
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
3000
3500
4000
4500
5000
5500
6000
6500
7000
110100
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
Pea k Half Sine Wave On-sta te Current (A)
ST2 8 0 S Se r i e s
Initial T = 125°C
@ 6 0 Hz 0. 0 0 8 3 s
@ 5 0 Hz 0. 0 1 0 0 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
3000
3500
4000
4500
5000
5500
6000
6500
7000
110100
Numb e r Of Eq ua l Amp lit ud e Ha lf Cyc le Curren t Pulses (N)
Pea k Half Sine Wave On-sta te Curren t (A)
ST2 8 0 S Se r i e s
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4
T = 2 5 ° C
J
Instantaneous On-state Current (A)
In st a n t a n e o us O n - st a t e Vo lt a g e ( V)
T = 125°C
J
ST280S Series
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq u a r e W a v e P u l se D u r a t i o n ( s)
thJC
Transient Therma l Imp edance Z (K/ W)
Steady State Value
R = 0.105 K/ W
(DC Operation)
ST2 8 0 S Se r i e s
thJC
VS-ST280S Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Mar-14
6
Document Number: 94402
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj = 2 5 ° C
Tj = 1 2 5 ° C
Tj =- 4 0 ° C
(1) (2) (3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Fr e q u e n c y Li m it e d b y PG ( A V )
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
D e v i c e : ST2 8 0 S Se r i e s
(4)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95077
1
- Thyristor
2
- Essential part number
3
- 0 = Converter grade
4
9
- S = Compression bonding stud
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6
- P = Stud base 3/4"-16UNF-2A threads
7
- 0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
8
- V = Glass-metal seal
Note: For metric device M16 x 1.5 contact factory
Device code
51 32 4 6 7 8 9
STVS- 28 0 S 06 P 0 V
- Vishay Semiconductors product
P1-P3P4-P6P7-P8

VS-ST280S04P1V

Mfr. #:
Buy VS-ST280S04P1V
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules Thyristors - TO-93 COMP RND-e3
Lifecycle:
New from this manufacturer.
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