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IR2184

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24
IR2184
(
4
)(
S
) & (PbF)
Typical Connection
HALF-BRIDGE DRIVER
Features
•
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
•
Gate drive supply range from 10 to 20V
•
Undervoltage lockout for both channels
•
3.3V and 5V input logic compatible
•
Matched propagation delay for both channels
•
Logic and power ground +/- 5V offset.
•
Lower di/dt gate driver for better noise immunity
•
Output source/sink current capability 1.4A/1.8A
•
Also available LEAD-FREE (PbF)
IR21844
IR2184
www.irf.com 1
Data Sheet No. PD60174 revG
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
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












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
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
(Refer to Lead Assignments for correct
configuration). This/These diagram(s) show
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.
Packages
14-Lead PDIP
IR21844
8-Lead SOIC
IR2184S
14-Lead SOIC
IR21844S
8-Lead PDIP
IR2184
Description
The IR2184(4)(S) are high voltage,
high speed power MOSFET and IGBT
drivers with dependent high and low
side referenced output channels. Pro-
prietary HVIC and latch immune
CMOS technologies enable rugge-
dized monolithic construction. The
logic input is compatible with standard
CMOS or LSTTL output, down to 3.3V
logic. The output drivers feature a
high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be
used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600
volts.







  
 

  


  

 
 

  

 
 

IR2181/IR2183/IR2184 Feature Comparison
IR2184
(
4
)(S) & (PbF)
2 www.irf.com
Symbol Definition Min. Max. Units
V
B
High side floating absolute voltage -0.3 625
V
S
High side floating supply offset voltage V
B
- 25 V
B
+ 0.3
V
HO
High side floating output voltage V
S
- 0.3 V
B
+ 0.3
V
CC
Low side and logic fixed supply voltage -0.3 25
V
LO
Low side output voltage -0.3 V
CC
+ 0.3
DT Programmable dead-time pin voltage (IR21844 only) V
SS
- 0.3 V
CC
+ 0.3
V
IN
Logic input voltage (IN & SD) V
SS
- 0.3 V
SS
+ 10
V
SS
Logic ground (IR21844 only) V
CC
- 25 V
CC
+ 0.3
dV
S
/dt Allowable offset supply voltage transient — 50 V/ns
P
D
Package power dissipation @ T
A
≤ +25°C (8-lead PDIP) — 1.0
(8-lead SOIC) — 0.625
(14-lead PDIP) — 1.6
(14-lead SOIC) — 1.0
Rth
JA
Thermal resistance, junction to ambient (8-lead PDIP) — 125
(8-lead SOIC) — 200
(14-lead PDIP) — 75
(14-lead SOIC) — 120
T
J
Junction temperature — 150
T
S
Storage temperature -50 150
T
L
Lead temperature (soldering, 10 seconds) — 300
V
°C
°C/W
W
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board
mounted and still air conditions.
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
and V
SS
offset rating are tested with all supplies biased at 15V differential.
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
Note 2: IN and SD are internally clamped with a 5.2V zener diode.
VB High side floating supply absolute voltage V
S
+ 10 V
S
+ 20
V
S
High side floating supply offset voltage Note 1 600
V
HO
High side floating output voltage V
S
V
B
V
CC
Low side and logic fixed supply voltage 10 20
V
LO
Low side output voltage 0 V
CC
V
IN
Logic input voltage (IN & SD) V
SS
V
SS
+ 5
DT Programmable dead-time pin voltage (IR21844 only) V
SS
V
CC
V
SS
Logic ground (IR21844 only) -5 5
T
A
Ambient temperature -40 125 °C
V
Symbol Definition Min. Max. Units
IR2184
(
4
)(S) & (PbF)
www.irf.com 3
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, V
SS
= COM, C
L
= 1000 pF, T
A
= 25°C, DT = VSS unless otherwise specified.
Symbol Definition Min. Typ. Max. Units Test Conditions
t
on
Turn-on propagation delay — 680 900 V
S
= 0V
t
off
Turn-off propagation delay — 270 400 V
S
= 0V or 600V
t
sd Shut-down propagation delay
— 180 270
MTon Delay matching, HS & LS turn-on — 0 90
MToff Delay matching, HS & LS turn-off — 0 40
t
r
Turn-on rise time — 40 60 V
S
= 0V
t
f
Turn-off fall time — 20 35 V
S
= 0V
DT Deadtime: LO turn-off to HO turn-on(DT
LO-HO) &
280 400 520 RDT= 0
HO turn-off to LO turn-on (DT
HO-LO)
456µsec RDT = 200k
MDT Deadtime matching = DT
LO - HO
- DT
HO-LO
— 0 50 RDT=0
— 0 600 RDT = 200k
nsec
nsec
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, V
SS
= COM, DT= V
SS
and T
A
= 25°C unless otherwise specified. The V
IL
, V
IH
and I
IN
parameters are referenced to V
SS
/COM and are applicable to the respective input leads: IN and SD. The V
O
, I
O
and Ron
parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol Definition Min. Typ. Max. Units Test Conditions
V
IH
Logic “1” input voltage for HO & logic “0” for LO 2.7 — — V
CC
= 10V to 20V
V
IL
Logic “0” input voltage for HO & logic “1” for LO — — 0.8 V
CC
= 10V to 20V
V
SD,TH+ SD input positive going threshold 2.7
—— V
CC
= 10V to 20V
V
SD,TH- SD input negative going threshold
——
0.8
V
CC
= 10V to 20V
V
OH
High level output voltage, V
BIAS
- V
O
— — 1.2 I
O
= 0A
V
OL
Low level output voltage, V
O
— — 0.1 I
O
= 0A
I
LK
Offset supply leakage current — — 50 V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
supply current 20 60 150 V
IN
= 0V or 5V
I
QCC
Quiescent V
CC
supply current 0.4 1.0 1.6 mA V
IN
= 0V or 5V
I
IN+
Logic “1” input bias current — 25 60 IN = 5V, SD = 0V
I
IN-
Logic “0” input bias current — — 1.0 IN = 0V, SD = 5V
V
CCUV+
V
CC
and V
BS
supply undervoltage positive going 8.0 8.9 9.8
V
BSUV+
threshold
V
CCUV-
V
CC
and V
BS
supply undervoltage negative going 7.4 8.2 9.0
V
BSUV-
threshold
V
CCUVH
Hysteresis 0.3 0.7 —
V
BSUVH
I
O+
Output high short circuit pulsed current 1.4 1.9 — V
O
= 0V,
PW ≤ 10 µs
I
O-
Output low short circuit pulsed current 1.8 2.3 — V
O
= 15V,
PW ≤ 10 µs
V
µA
µA
V
A
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24

IR2184

Mfr. #:
Buy IR2184
Manufacturer:
Infineon Technologies
Description:
IC DRIVER HIGH/LOW SIDE 8-DIP
Lifecycle:
New from this manufacturer.
Delivery:
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