BC337RL1 Datasheet BC337RL1, BC338-25ZL1, BC337ZL1G | P1-P3

September, 2005 − Rev. 5

1 Publication Order Number:

BC337/D

BC337, BC337−16,

BC337−25, BC337−40,

BC338−25

Amplifier Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol BC337 BC338 Unit

Collector − Emitter Voltage V

CEO

45 25 Vdc

Collector − Base Voltage V

CBO

50 30 Vdc

Emitter − Base Voltage V

EBO

5.0 Vdc

Collector Current − Continuous I

C

800 mAdc

Total Device Dissipation

@ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation

@ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Ambient

R

q

JA

200 °C/W

Thermal Resistance,

Junction−to−Case

R

q

JC

83.3 °C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

COLLECTOR

1

2

BASE

3

EMITTER

MARKING

DIAGRAM

BC33

x−xx

AYWW G

G

BC33x−xx = Device Code

(Refer to page 4)

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

3

2

1

TO−92

CASE 29

STYLE 17

BC337, BC337−16, BC337−25, BC337−40, BC338−25

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

C

= 10 mA, I

B

= 0) BC337

BC338

V

(BR)CEO

45

25

−

Vdc

Collector−Emitter Breakdown Voltage

(I

C

= 100 mA, I

E

= 0) BC337

BC338

V

(BR)CES

50

30

−

Vdc

Emitter−Base Breakdown Voltage

(I

E

= 10 mA, I

C

= 0)

V

(BR)EBO

5.0 − − Vdc

Collector Cutoff Current

(V

CB

= 30 V, I

E

= 0) BC337

(V

CB

= 20 V, I

E

= 0) BC338

I

CBO

−

100

nAdc

Collector Cutoff Current

(V

CE

= 45 V, V

BE

= 0) BC337

(V

CE

= 25 V, V

BE

= 0) BC338

I

CES

−

100

nAdc

Emitter Cutoff Current

(V

EB

= 4.0 V, I

C

= 0)

I

EBO

− − 100 nAdc

ON CHARACTERISTICS

DC Current Gain

(I

C

= 100 mA, V

CE

= 1.0 V) BC337

BC337−16

BC337−25/BC338−25

BC337−40

(I

C

= 300 mA, V

CE

= 1.0 V)

h

FE

100

160

250

60

−

630

250

400

630

−

Base−Emitter On Voltage

(I

C

= 300 mA, V

CE

= 1.0 V)

V

BE(on)

− − 1.2 Vdc

Collector−Emitter Saturation Voltage

(I

C

= 500 mA, I

B

= 50 mA)

V

CE(sat)

− − 0.7 Vdc

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

(V

CB

= 10 V, I

E

= 0, f = 1.0 MHz)

C

ob

− 15 − pF

Current−Gain − Bandwidth Product

(I

C

= 10 mA, V

CE

= 5.0 V, f = 100 MHz)

f

T

− 210 − MHz

Figure 1. Thermal Response

t, TIME (SECONDS)

0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

q

JC

(t) = (t) q

JC

q

JC

= 100°C/W MAX

q

JA

(t) = r(t) q

JA

q

JA

= 375°C/W MAX

D CURVES APPLY FOR

POWER

PULSE TRAIN SHOWN

READ TIME AT t

1

T

J(pk)

− T

C

= P

(pk)

q

JC

(t)

t

1

t

2

P

(pk)

DUTY CYCLE, D = t

1

/t

2

SINGLE PULSE

BC337, BC337−16, BC337−25, BC337−40, BC338−25

http://onsemi.com

3

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

1.0 ms1.0 s

T

J

= 135°C

T

A

= 25°C

T

C

= 25°C

dc

(APPLIES BELOW RATED V

CEO

)

1000

10

1001.0 3.0 10 30

V

CE

, COLLECTOR−EMITTER VOLTAGE

Figure 2. Active Region − Safe Operating Area

I

C

, COLLECTOR CURRENT (MA)

Figure 3. DC Current Gain

I

C

, COLLECTOR CURRENT (mA)

h

FE

, DC CURRENT GAIN

100

1000

10

10000.1 10 100

100

1.0

T

J

= 135°C

100 ms

V

CE

= 1 V

T

J

= 25°C

I

B

, BASE CURRENT (mA)

Figure 4. Saturation Region

I

C

, COLLECTOR CURRENT (mA)

Figure 5. “On” Voltages

100

10

1

V

R

, REVERSE VOLTAGE (VOLTS)

Figure 6. Temperature Coefficients

+1

I

C

, COLLECTOR CURRENT (mA)

Figure 7. Capacitances

0.1 11 10 100 1000

−2

−1

0

V

CE

, COLLECTOR−EMITTER VOLTAGE (VOLT

S

V, VOLTAGE (VOLTS)

V

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

C, CAPACITANCE (pF)

1.0

0.8

0.6

0.4

0.2

0

0.01 0.1 10 1001

1.0

0.8

0.6

0.4

0.2

0

1 10 1000100

10 100

T

J

= 25°C

I

C

= 10 mA

T

A

= 25°C

V

BE(sat)

@ I

C

/I

B

= 10

V

BE(on)

@ V

CE

= 1 V

V

CE(sat)

@ I

C

/I

B

= 10

q

VC

for V

CE(sat)

q

VB

for V

BE

C

ob

C

ib

100 mA 300 mA 500 mA

BC337RL1

BC337RL1

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