www.fairchildsemi.com 2 OF 4 6/01/01 DS300309
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Collector-Emitter Breakdown I
C
= 10 mA, Ee = 0 BV
CEO
30 — V
Emitter-Base Breakdown I
E
= 100 µA, Ee = 0 BV
EBO
5.0 — V
Collector-Base Breakdown I
C
= 100 µA, Ee = 0 BV
CBO
40 — V
Collector-Emitter Leakage V
CE
= 12 V, Ee = 0 I
CEO
— 100 nA
Reception Angle at 1/2 Sensitivity θ ±8 Degrees
On-State Collector Current L14P1 Ee = 0.5 mW/cm
2
, V
CE
= 5 V
(7,8)
I
C(ON)
6.5 — mA
On-State Collector Current L14P2 Ee = 0.5 mW/cm
2
, V
CE
= 5 V
(7,8)
I
C(ON)
13.0 mA
On-State Photodiode Current Ee = 0.3 mW/cm
2
, V
CB
= 5 V I
CB(ON)
6.0 µA
Rise Time I
C
= 10 mA, V
CC
= 5 V, R
L
=100 Ω t
r
10 µs
Fall Time I
C
= 10 mA, V
CC
= 5 V, R
L
=100 Ω t
f
12 µs
Saturation Voltage L14P1 I
C
= 0.8 mA, Ee = 0.6 mW/cm
2(7,8)
V
CE(SAT)
— 0.40 V
Saturation Voltage L14P2 I
C
= 1.6 mA, Ee = 0.6 mW/cm
2(7,8)
V
CE(SAT)
— 0.40 V
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C) (All measurements made under pulse conditions)
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-65 to +125 °C
Storage Temperature T
STG
-65 to +150 °C
Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec °C
Collector to Emitter Breakdown Voltage
V
CEO
30 V
Collector to Base Breakdown Voltage V
CBO
40 V
Emitter to Base Breakdwon Voltage V
EBO
5V
Power Dissipation (T
A
= 25°C)
(1)
P
D
300 mW
Power Dissipation (T
C
= 25°C)
(2)
P
D
600 mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip
1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm
2
is approximately
equivalent to a tungsten source, at 2870°K, of 10 mW/cm
2
.
HERMETIC SILICON PHOTOTRANSISTOR
L14P1 L14P2
