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MMDT2227-7

P1-P3P4-P6
MMDT2227
Document Number: DS30122 Rev: 12 - 2
1 of 6
www.diodes.com
September 2012
© Diodes Incorporated
MMDT2227
ADVANCE INFORMATION
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features & Benefits
• Complementary Pairs One 2222A Type (NPN)
• One 2907A Type (PNP)
• Ideal for Low Power Amplification and Switching
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
MMDT2227-7-F K27 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul
Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7
8 9 O N D
Top View
Device S
y
mbol
SOT363
Top View
Pin-Out
K27 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
K27
YM
MMDT2227
Document Number: DS30122 Rev: 12 - 2
2 of 6
www.diodes.com
September 2012
© Diodes Incorporated
MMDT2227
ADVANCE INFORMATION
Maximum Ratings, 2222A Type (NPN) (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
75 V
Collector-Emitter Voltage
V
CEO
40 V
Emitter-Base Voltage
V
EBO
6 V
Continuous Collector Current
I
C
600 mA
Maximum Ratings, 2907A Type (PNP) (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-60 V
Collector-Emitter Voltage
V
CEO
-60 V
Emitter-Base Voltage
V
EBO
-6.0 V
Continuous Collector Current
I
C
-600 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Notes 5)
P
D
200 mW
Thermal Resistance, Junction to Ambient (Notes 5)
R
θ
JA
625
°C/W
Thermal Resistance, Junction to Case (Note 6)
R
θ
JC
150
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 5. Device mounted on 1 inch x 0.85 inch x 0.062 inch FR-4 PCB
6. Thermal resistance from junction to the top of package
MMDT2227
Document Number: DS30122 Rev: 12 - 2
3 of 6
www.diodes.com
September 2012
© Diodes Incorporated
MMDT2227
ADVANCE INFORMATION
Electrical Characteristics, 2222A Type (NPN) (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
BV
CBO
75
⎯
V
I
C
= 100μA, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
40
⎯
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
6.0
⎯
V
I
E
= 100μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
10
nA
μA
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= +150°C
Collector Cutoff Current
I
CEX
⎯
10 nA
V
CE
= 60V, V
EB
(
off
)
= 3.0V
Emitter Cutoff Current
I
EBO
⎯
10 nA
V
EB
= 5.0V, I
C
= 0
Base Cutoff Current
I
BL
⎯
20 nA
V
CE
= 60V, V
EB
(
off
)
= 3.0V
ON CHARACTERISTICS (Note 7)
DC Current Gain
h
FE
35
50
75
100
40
50
35
⎯
⎯
⎯
300
⎯
⎯
⎯
⎯
I
C
= 100μA, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V, T
A
= -55°C
I
C
= 150mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯
0.3
1.0
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
V
BE(sat)
0.6
⎯
1.2
2.0
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
8 pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
⎯
25 pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Current Gain-Bandwidth Product
f
T
300
⎯
MHz
V
CE
= 20V, I
C
= 20mA,
f = 100MHz
Noise Figure NF
⎯
4.0 dB
V
CE
= 10V, I
C
= 100μA,
R
S
= 1.0kΩ,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯
10 ns
V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= - 0.5V, I
B1
= 15mA Rise Time
t
r
⎯
25 ns
Storage Time
t
s
⎯
225 ns
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA Fall Time
t
f
⎯
60 ns
Notes: 7. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
1.0
5.0
20
30
10
0.1
101.0
50
C
A
P
A
C
IT
A
N
C
E (p
F
)
V , REVERSE VOLTAGE (V)
Fig. 1 (2222A) Typical Capacitance
R
C
obo
100
C
ibo
f = 1MHz
0.001 0.01
1
10
0.1
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
Fig. 2 Typical Collector Saturation Region
(2222A Type - NPN)
B
V
C
O
LL
E
C
T
O
R
-
E
M
ITT
E
R
V
O
LT
A
G
E
(V)
CE
P1-P3P4-P6

MMDT2227-7

Mfr. #:
Buy MMDT2227-7
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 40 / 60V 200mW
Lifecycle:
New from this manufacturer.
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