ZVN4306ASTZ Datasheet ZVN4306A, ZVN4306ASTOB, ZVN4306ASTZ | P1-P3

ZVN4306A

Document number: DS33367 Rev. 4 - 2

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ZVN4306A

60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN E-LINE

Product Summary

V

(BR)DSS

Max R

DS(on)

Max I

D

@ T

A

= 25°C

60V

330mΩ @ V

GS

= 10V

1.4A

450mΩ @ V

GS

= 5V

1.2A

Application

• DC – DC convertors

• Solenoids / relay drivers for automotive

Features and Benefits

• Breakdown Voltage BV

DSS

> 60V

• R

DS(on)

≤

0.33Ω @ V

GS

= 10V

• Maximum continuous drain current I

D

= 1.1A

• “Green” component, Lead Free Finish / RoHS compliant

(Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: E-Line (TO-92 Compatible)

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish

• Weight: 0.159 grams (approximate)

Ordering Information (Note 1)

Part Number Package Marking Quantity

ZVN4306ASTZ E-Line ZVN4306A 2,000 per Ammo pack

ZVN4306A E-Line ZVN4306A 4,000 loose per box

Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds. All applicable RoHS

exemptions applied. Further information about Diodes Inc.’s “Green” Policy can be found on our website at http:// www.diodes.com

Marking Information

ZVN4306A = Product Type Marking Code On Rounded Face

Equivalent Circuit Pin Out - Bottom View E-Line

D

S

G



Green

ZVN4306A

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ZVN4306A

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage

V

DSS

60 V

Gate-Source Voltage

V

GSS

±20 V

Continuous Drain Current

I

D

1.1 A

Practical Continuous Drain Current

I

DP

1.3 A

Pulsed Drain Current

I

DM

15 A

Thermal Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation

P

D

850 mW

Practical Power Dissipation (Note 2)

P

DP

1.13 W

Thermal Resistance, Junction to Ambient

R

θJA

150 °C/W

Thermal Resistance, Junction to Ambient (Note 2)

R

θJA

111 °C/W

Thermal Resistance, Junction to Leads (Note 3)

R

θJL

50 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150 °C

Notes: 2. For a device mounted on 25mm X 25mm X 1.6mm FR-4 PCB with high coverage of single sided 1oz copper, in still air condition.

3. Thermal resistance from junction to solder-point

ZVN4306A

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Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage

BV

DSS

60 - - V

V

GS

= 0V, I

D

= 1mA

Zero Gate Voltage Drain Current T

J

= 25°C I

DSS

- -

1

20

µA

V

DS

= 60V, V

GS

= 0V

V

DS

= 48V, V

GS

= 0V, T

A

= 125°C

Gate-Source Leakage

I

GSS

- - ±100 nA

V

GS

= ±20V, V

DS

= 0V

On-State Drain Current

I

D

(

on

)

12 - - A

V

GS

= 10V, V

DS

= 10V

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

V

GS

(

th

)

1.3 - 3 V

V

DS

= V

GS

, I

D

= 1mA

Static Drain-Source On-Resistance

R

DS (on)

-

0.22

0.32

0.33

0.45

Ω

V

GS

= 10V, I

D

= 3A

V

GS

= 5V, I

D

= 1.5A

Forward Transconductance

g

fs

700 - - mS

V

DS

= 10V, I

D

= 3A

DYNAMIC CHARACTERISTICS (Note 4)

Input Capacitance

C

iss

- - 350

pF

V

DS

= 25V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- - 140

pF

Reverse Transfer Capacitance

C

rss

- - 30

pF

Turn-On Delay Time (Note 5)

t

d

(

on

)

- - 8

ns

V

DD

= 25V, I

D

= 3A, V

GEM

= 10V

Turn-On Rise Time (Note 5)

t

r

- - 25

ns

Turn-Off Delay Time (Note 5)

t

d

(

off

)

- - 30

ns

Turn-Off Fall Time (Note 5)

t

f

- - 16

ns

Notes: 4. Measured under pulsed conditions. Width = 300µs. Duty cycle ≤ 2%

5. Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

ZVN4306ASTZ

ZVN4306ASTZ

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