ZXTC2045E6TA

ZXTC2045E6
Document Number: DS33645 Rev: 3 - 2
1 of 6
www.diodes.com
March 2015
© Diodes Incorporated
ZXTC2045E6
ADVANCE INFO R MA T I O N
A Product Line of
Diodes Incorporated
30V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26
Features
NPN + PNP Combination
BV
CEO
> 30 (-30)V
BV
CEV
> 40 (-40)V
I
CM
= 5 (-5)A Peak Pulse Current
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description
Advanced process capability is used to achieve this high performance
device. Combining NPN and PNP transistors, the SOT26 package
provides a compact solution for the intended applications.
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads; Solderable per
MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
Applications
MOSFET and IGBT Gate Driving
Motor Drive
Ordering Information
(Notes 4 & 5)
Product
Compliance
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXTC2045E6TA
AEC-Q101 2045 7 8 3,000
ZXTC2045E6QTA
Automotive 2045 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/ for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
Marking Information
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
C D E F G H I J K L M
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1 2 3 4 5 6 7 8 9 O N D
Top View
Device Symbol
SOT26
Top View
Pin-Out
C
1
E1
B
1
C
2
E2
B2
Q1
Q2
C
1
B1
C
2
E1
B2
E2
YM
2045
2045 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
SOT26
ZXTC2045E6
Document Number: DS33645 Rev: 3 - 2
2 of 6
www.diodes.com
March 2015
© Diodes Incorporated
ZXTC2045E6
ADVANCE INFO R MA T I O N
A Product Line of
Diodes Incorporated
Absolute Maximum Ratings – Q1 (NPN Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CE
V
40 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
7 V
Continuous Collector Current
I
C
1.5 A
Peak Pulsed Collector Current
I
CM
5 A
Base Current
I
B
1 A
Absolute Maximum Ratings – Q2 (PNP Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CE
V
-40 V
Collector-Emitter Voltage
V
CEO
-30 V
Emitter-Base Voltage
V
EBO
-7 V
Continuous Collector Current
I
C
-1.5 A
Peak Pulsed Collector Current
I
CM
-5 A
Base Current
I
B
-1 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Notes 6 & 10)
P
D
0.7
5.6
W
mW/°C
(Notes 7 & 10)
0.9
7.2
(Notes 7 & 11)
1.1
8.8
(Notes 8 & 10)
1.1
8.8
(Notes 9 & 10)
1.7
13.6
Thermal Resistance, Junction to Ambient
(Notes 6 & 10)
R
θ
JA
179
°C/W
(Notes 7 & 10) 139
(Notes 7 & 11) 113
(Notes 8 & 10) 113
(Notes 9 & 10) 73
Thermal Resistance, Junction to Lead (Note 12)
R
θ
JL
95.50
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
ESD Ratings
(Note 13)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Same as Note 6, except the device is surface mounted on 25mm x 25mm 1oz copper.
8. Same as Note 6, except the device is surface mounted on 50mm x 50mm 2oz copper.
9. Same as Note 8, except the device is measured at t < 5 seconds.
10. For device with one active die, both collectors attached to a common heatsink.
11. For device with two active die running at equal power, split heatsink 50% to each collector.
12. Thermal resistance from junction to solder-point (at the end of the collector lead).
13. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTC2045E6
Document Number: DS33645 Rev: 3 - 2
3 of 6
www.diodes.com
March 2015
© Diodes Incorporated
ZXTC2045E6
ADVANCE INFO R MA T I O N
A Product Line of
Diodes Incorporated
Thermal Characteristics and Derating Information

ZXTC2045E6TA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN & PNP 40 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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