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SQ3985EV-T1_GE3

P1-P3P4-P6P7-P9P10-P10
SQ3985EV
www.vishay.com
Vishay Siliconix
S15-1922-Rev. A, 11-Aug-15
1
Document Number: 63249
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive Dual P-Channel 20 V (D-S) 175 °C MOSFET
Marking Code: 8T
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
V
DS
(V) -20
R
DS(on)
(Ω) at V
GS
= -4.5 V 0.145
R
DS(on)
(Ω) at V
GS
= -2.5 V 0.200
R
DS(on)
(Ω) at V
GS
= -1.8 V 0.300
I
D
(A) -3.9
Configuration Dual
Package TSOP-6
Top View
TSOP-6 Dual
1
G
1
2
S
2
3
G
2
D
1
6
S
1
5
D
2
4
S
2
G
2
D
2
P-Channel MOSFET
S
1
G
1
D
1
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-20
V
Gate-Source Voltage V
GS
± 8
Continuous Drain Current
T
C
= 25 °C
I
D
-3.9
A
T
C
= 125 °C -2.2
Continuous Source Current (Diode Conduction)
a
I
S
-3.7
Pulsed Drain Current
b
I
DM
-15
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
-8.5
Single Pulse Avalanche Energy E
AS
3.6 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
3
W
T
C
= 125 °C 1
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
166
°C/W
Junction-to-Foot (Drain) R
thJC
50
SQ3985EV
www.vishay.com
Vishay Siliconix
S15-1922-Rev. A, 11-Aug-15
2
Document Number: 63249
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -20 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -0.45 -0.6 -1.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 8 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= -20 V - - -1
μA V
GS
= 0 V V
DS
= -20 V, T
J
= 125 °C - - -50
V
GS
= 0 V V
DS
= -20 V, T
J
= 175 °C - - -150
On-State Drain Current
a
I
D(on)
V
GS
= -4.5 V V
DS
≥ -5 V -8 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -4.5 V I
D
= -2.8 A - 0.130 0.145
ΩV
GS
= -2.5 V I
D
= -2 A - 0.177 0.200
V
GS
= -1.8 V I
D
= -1.8 A - 0.240 0.300
Forward Transconductance
b
g
fs
V
DS
= -1.6 V, I
D
= -2.8 A - 7 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= -10 V, f = 1 MHz
- 235 350
pF Output Capacitance C
oss
-75110
Reverse Transfer Capacitance C
rss
-4057
Total Gate Charge
c
Q
g
V
GS
= -4.5 V V
DS
= -10 V, I
D
= -2.8 A
-3.14.6
nC Gate-Source Charge
c
Q
gs
-0.5-
Gate-Drain Charge
c
Q
gd
-0.9-
Gate Resistance R
g
f = 1 MHz 2.7 5.5 8.3 Ω
Turn-On Delay Time
c
t
d(on)
V
DD
= -10 V, R
L
= 10 Ω
I
D
≅ -1 A, V
GEN
= -4.5 V, R
g
= 1 Ω
-57
ns
Rise Time
c
t
r
-2635
Turn-Off Delay Time
c
t
d(off)
-4054
Fall Time
c
t
f
-2028
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
---15A
Forward Voltage V
SD
I
F
= -1.6 A, V
GS
= 0 V - -0.8 -1.2 V
SQ3985EV
www.vishay.com
Vishay Siliconix
S15-1922-Rev. A, 11-Aug-15
3
Document Number: 63249
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
012345
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 5 V thru 2 V
V
GS
= 1 V
V
GS
= 1.5 V
0.0
0.1
0.2
0.3
0.4
0.5
0246810
R
DS(on)
-On-Resistance (Ω)
I
D
-Drain Current (A)
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 1.8 V
0
1
2
3
4
5
01234
V
GS
- Gate-to-Source Voltage (V)
Q
g
-Total Gate Charge (nC)
I
D
= -2.8 A
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= -55 °C
T
C
= 125 °C
T
C
= 25 °C
0
100
200
300
400
500
0 5 10 15 20
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.5
0.8
1.1
1.4
1.7
2.0
-50 -25 0 25 50 75 100 125 150 175
R
DS(on)
-On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
=1.8 V
I
D
= 1.9 A
V
GS
= 4.5 V
V
GS
= 2.5 V
P1-P3P4-P6P7-P9P10-P10

SQ3985EV-T1_GE3

Mfr. #:
Buy SQ3985EV-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P Ch -20Vds 8Vgs AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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