SiHH11N60EF
www.vishay.com
Vishay Siliconix
S15-2995-Rev. A, 21-Dec-15
1
Document Number: 91726
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
EF Series Power MOSFET with Fast Body Diode
FEATURES
• Fast body diode MOSFET using E series
technology
• Reduced t
rr
, Q
rr
, and I
RRM
• Completely lead (Pb)-free device
• Low figure-of-merit (FOM) R
on
x Q
g
• Low input capacitance (C
iss
)
• Low switching losses due to reduced Q
rr
• Ultra low gate charge (Q
g
)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 140 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25 , I
AS
= 3 A.
c. I
SD
I
D
, dI/dt = 100 A/μs, starting T
J
= 25 °C.
PRODUCT SUMMARY
V
DS
(V) at T
J
max. 650
R
DS(on)
typ. () at 25 °C V
GS
= 10 V 0.310
Q
g
max. (nC) 62
Q
gs
(nC) 7
Q
gd
(nC) 13
Configuration Single
Pin 3
Pin 4
Pin 1
Pin 2
N-Channel MOSFET
PowerPAK
®
8 x 8
1
2
3
3
4
ORDERING INFORMATION
Package PowerPAK 8 x 8
Lead (Pb)-free and Halogen-free SiHH11N60EF-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
600
V
Gate-Source Voltage V
GS
± 30
Continuous Drain Current (T
J
= 150 °C) V
GS
at 10 V
T
C
= 25 °C
I
D
11
AT
C
= 100 °C 7
Pulsed Drain Current
a
I
DM
27
Linear Derating Factor 0.9 W/°C
Single Pulse Avalanche Energy
b
E
AS
127 mJ
Maximum Power Dissipation P
D
114 W
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150 °C
Drain-Source Voltage Slope T
J
= 125 °C
dV/dt
70
V/ns
Reverse Diode dV/dt
c
28