Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
CMOS Schmitt-triggered inputs with pull-down
Output in phase with input (IR2117) or out of
phase with input (IR2118)
Also available LEAD-FREE
Data Sheet No. PD60146 Rev O
SINGLE CHANNEL DRIVER
Product Summary
V
OFFSET
600V max.
I
O
+/- 200 mA / 420 mA
V
OUT
10 - 20V
t
on/off
(typ.) 125 & 105 ns
Packages
Typical Connection
8-Lead PDIP
IR2117/IR2118
8-Lead SOIC
IR2117S/IR2118S
IR2117
IR2118
















IR2117(S)/IR2118(S) & (PbF)
www.irf.com 1
(Refer to Lead Assignments for correct pin configuration).
This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for
proper circuit board layout.
Description
The IR2117/IR2118(S) is a high voltage, high speed
power MOSFET and IGBT driver. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. The logic input is compatible
with standard CMOS outputs. The output driver fea-
tures a high pulse current buffer stage designed for
minimum cross-conduction. The floating channel can
be used to drive an N-channel power MOSFET or IGBT
in the high or low side configuration which operates up
to 600 volts.
IR2117(S)/IR2118(S) & (PbF)
2 www.irf.com
Symbol Definition Min. Max. Units
V
B
High side floating supply voltage -0.3 625
V
S
High side floating supply offset voltage V
B
- 25 V
B
+ 0.3
V
HO
High side floating output voltage V
S
- 0.3 V
B
+ 0.3
V
CC
Logic supply voltage -0.3 25
V
IN
Logic input voltage -0.3 V
CC
+ 0.3
dV
s
/dt Allowable offset supply voltage transient (figure 2) 50 V/ns
P
D
Package power dissipation @ T
A
+25°C (8 lead PDIP) 1.0
(8 lead SOIC) 0.625
Rth
JA
Thermal resistance, junction to ambient (8 lead PDIP) 125
(8 lead SOIC) 200
T
J
Junction temperature 150
T
S
Storage temperature -55 150
T
L
Lead temperature (soldering, 10 seconds) 300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Additional information is shown in Figures 5 through 8.
Symbol Definition Min. Max. Units
V
B
High side floating supply absolute voltage V
S
+ 10 V
S
+ 20
V
S
High side floating supply offset voltage Note 1 600
V
HO
High side floating output voltage V
S
V
B
V
CC
Logic supply voltage 10 20
V
IN
Logic input voltage 0 V
CC
T
A
Ambient temperature -40 125 °C
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
W
°C/W
V
°C
V
IR2117(S)/IR2118(S) & (PbF)
www.irf.com 3
Symbol Definition Min. Typ. Max. Units Test Conditions
t
on
Turn-on propagation delay 125 200 V
S
= 0V
t
off
Turn-off propagation delay 105 180 V
S
= 600V
t
r
Turn-on rise time 80 130
t
f
Turn-off fall time 40 65
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, C
L
= 1000 pF and T
A
= 25°C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Figure 3.
ns
Symbol Definition Min. Typ. Max. Units Test Conditions
V
IH
input voltage - logic “1” (IR2117) logic “0” (IR2118) 9.5
V
IL
Input voltage - logic “0” (IR2117) logic “1” (IR2118) 6.0
V
OH
High level output voltage, V
BIAS
- V
O
100 I
O
= 0A
V
OL
Low level output voltage, V
O
100 I
O
= 0A
I
LK
Offset supply leakage current 50 V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
supply current 50 240 V
IN
= 0V or V
CC
I
QCC
Quiescent V
CC
Supply Current 70 340 V
IN
= 0V or V
CC
I
IN+
Logic “1” input bias current (IR2117) V
IN
= V
CC
(IR2118) V
IN
= 0V
I
IN-
Logic “0” input bias current (IR2117) V
IN
= 0V
(IR2118) V
IN
= V
CC
V
BSUV+
V
BS
supply undervoltage positive going threshold 7.6 8.6 9.6
V
BSUV-
V
BS
supply undervoltage negative going threshold 7.2 8.2 9.2
V
CCUV+
V
CC
supply undervoltage positive going threshold 7.6 8.6 9.6
V
CCUV-
V
CC
supply undervoltage negative going threshold 7.2 8.2 9.2
I
O+
Output high short circuit pulsed current 200 250 V
O
= 0V
V
IN
= Logic “1”
PW10 µs
I
O-
Output low short circuit pulsed current 420 500 V
O
= 15V
V
IN
= Logic “0”
PW10 µs
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
mA
V
V
mV
— 20 40
µA
— — 1.0

IR2117SPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Gate Drivers 1 HI SIDE DRVR NONINVERTING INPUT
Lifecycle:
New from this manufacturer.
Delivery:
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