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MMBT4126LT1

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2001
October, 2016 − Rev. 3
1 Publication Order Number:
MMBT4126LT1/D
MMBT4126LT1G
General Purpose Transistor
PNP Silicon
Features
• Moisture Sensitivity Level: 1
• ESD Rating: − Human Body Model: > 4000 V
− Machine Model: > 400 V
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−25 Vdc
Collector−Base Voltage V
CBO
−25 Vdc
Emitter−Base Voltage V
EBO
−4 Vdc
Collector Current−Continuous I
C
−200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) @T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) @T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
R
q
JA
417 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Device Package Shipping
†
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
C3 M G
G
C3 = Device Code
M = Date Code*
G = Pb−Free Package
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
MMBT4126LT1G SOT−23
(Pb−Free)
3000/Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
www.onsemi.com
MMBT4126LT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= −1.0 mAdc, I
B
= 0)
V
(BR)CEO
−25 −
Vdc
Collector−Base Breakdown Voltage
(I
C
= −10 mAdc, I
E
= 0)
V
(BR)CBO
−25 −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −10 mAdc, I
C
= 0)
V
(BR)EBO
−4 −
Vdc
Collector Cutoff Current
(V
CE
= −30 Vdc, V
EB
= −3.0 Vdc)
I
CEX
− −50
nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= −2.0 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −50 mAdc, V
CE
= −1.0 Vdc)
H
FE
120
60
300
−
−
Collector−Emitter Saturation Voltage
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
CE(sat)
− −0.4
Vdc
Base−Emitter Saturation Voltage
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
BE(sat)
− −0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 100 MHz)
f
T
250 −
MHz
Output Capacitance
(V
CB
= −5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 4.5
pF
Input Capacitance
(V
EB
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
− 10
pF
Small−Signal Current Gain
(I
C
= −2.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
h
fe
120
2.5
480
−
−
Noise Figure
(I
C
= −100 mAdc, V
CE
= −5.0 Vdc, R
S
= 1.0 kW, f = 1.0 kHz)
NF
− 4.0
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
TYPICAL TRANSIENT CHARACTERISTICS
Figure 1. Capacitance
REVERSE BIAS (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 2. Charge Data
I
C
, COLLECTOR CURRENT (mA)
5000
1.0
V
CC
= 40 V
I
C
/I
B
= 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20
30 40
0.2 0.3 0.5 0.7
Q
T
Q
A
C
ibo
C
obo
T
J
= 25°C
T
J
= 125°C
MMBT4126LT1G
www.onsemi.com
3
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= −5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
Figure 3.
f, FREQUENCY (kHz)
2.0
3.0
4.0
5.0
1.0
0.1
Figure 4.
R
g
, SOURCE RESISTANCE (k OHMS)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20
40
0.2 0.4
0
100
4
6
8
10
12
2
0.1 1.0 2.0 4.0 10 20
40
0.2 0.4
100
NF, NOISE FIGURE (dB)
f = 1.0 kHz
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50 mA
I
C
= 100 mA
SOURCE RESISTANCE = 200 W
I
C
= 1.0 mA
SOURCE RESISTANCE = 200 W
I
C
= 0.5 mA
SOURCE RESISTANCE = 2.0 k
I
C
= 100 mA
SOURCE RESISTANCE = 2.0 k
I
C
= 50 mA
h PARAMETERS
(V
CE
= −10 Vdc, f = 1.0 kHz, T
A
= 25°C)
Figure 5. Current Gain
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 6. Output Admittance
I
C
, COLLECTOR CURRENT (mA)
h , DC CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 7. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
Figure 8. Voltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mA)
30
100
50
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0
5.0
0.5
10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
h , INPUT IMPEDANCE (k OHMS)
ie
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
7
5
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
fe
m
-4
70
30
0.7
7.0
0.7
7.0
7.0
3.0
0.7
0.3
0.7
7.0
0.7
7.0
P1-P3P4-P5

MMBT4126LT1

Mfr. #:
Buy MMBT4126LT1
Manufacturer:
ON Semiconductor
Description:
TRANS PNP 25V 0.2A SOT23
Lifecycle:
New from this manufacturer.
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