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NGTB50N65FL2WG

P1-P3P4-P6P7-P9P10-P11
NGTB50N65FL2WG
www.onsemi.com
7
TYPICAL CHARACTERISTICS
Figure 23. IGBT Transient Thermal Impedance
ON−PULSE WIDTH (s)
10.10.010.0001
1
SQUARE−WAVE PEAK R(t) (°C/W)
0.00001
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
R
q
JC
= 0.36
Junction
C
1
C
2
R
1
R
2
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
Case
C
n
R
n
0.1
0.01
0.001
0.0001
0.001
R
i
(°C/W) C
i
(J/°C)
0.020315 0.004922
0.000001
0.034265
0.021803
0.054410
0.113326
0.040172
0.009229
0.045865
0.058120
0.088241
0.787180
Figure 24. Diode Transient Thermal Impedance
ON−PULSE WIDTH (s)
SQUARE−WAVE PEAK R(t) (°C/W)
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
1
R
q
JC
= 0.60
Junction
Case
C
1
C
2
R
1
R
2
R
n
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
C
n
10.10.010.00010.000001 0.00001 0.001
0.1
0.01
0.001
R
i
(°C/W) C
i
(J/°C)
0.0001250.007969
0.010774
0.010678
0.028006
0.045699
0.104967
0.059973
0.066388
0.134301
0.152890
0.000928
0.002961
0.003571
0.006920
0.009527
0.052729
0.150629
0.235463
0.654064
NGTB50N65FL2WG
www.onsemi.com
8
Figure 25. Collector Current vs. Switching Frequency
Figure 26. Test Circuit for Switching Characteristics
NGTB50N65FL2WG
www.onsemi.com
9
Figure 27. Definition of Turn On Waveform
P1-P3P4-P6P7-P9P10-P11

NGTB50N65FL2WG

Mfr. #:
Buy NGTB50N65FL2WG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 600V/50A FAST IGBT FSII T
Lifecycle:
New from this manufacturer.
Delivery:
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