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VS-MBRD660CTTRLPBF

P1-P3P4-P6P7-P7
VS-MBRD650CTPbF, VS-MBRD660CTPbF
www.vishay.com
Vishay Semiconductors
Revision: 14-Jan-11
1
Document Number: 94314
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 3 A
FEATURES
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-MBRD650CTPbF, VS-MBRD660CTPbF surface
mount, center tap, Schottky rectifier series has been
designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in
disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
2 x 3 A
V
R
50 V, 60 V
V
F
at I
F
0.65 V
I
RM
15 mA at 125 °C
T
J
max. 150 °C
Diode variation Common cathode
E
AS
6 mJ
Base
common
cathode
Common
cathode
2
4
13
Anode Anode
D-PAK (TO-252AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 6 A
V
RRM
50/60 V
I
FSM
t
p
= 5 μs sine 490 A
V
F
3 A
pk
, T
J
= 125 °C (per leg) 0.65 V
T
J
Range -40 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRD650CTPbF VS-MBRD660CTPbF UNITS
Maximum DC reverse voltage V
R
50 60 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 128 °C, rectangular waveform
3.0
A
per device 6
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
490
10 ms sine or 6 ms rect. pulse 75
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 12 mH 6 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.6 A
VS-MBRD650CTPbF, VS-MBRD660CTPbF
www.vishay.com
Vishay Semiconductors
Revision: 14-Jan-11
2
Document Number: 94314
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
3 A
T
J
= 25 °C
0.7
V
6 A 0.9
3 A
T
J
= 125 °C
0.65
6 A 0.85
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.1
mA
T
J
= 125 °C 15
Typical junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 145 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 5.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
(1)
, T
Stg
-40 to +150 °C
Maximum thermal resistance,
junction to case
per leg
R
thJC
DC operation
See fig. 4
6
°C/W
per device 3
Maximum thermal resistance,
junction to ambient
R
thJA
80
Approximate weight
0.3 g
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA)
MBRD650CT
MBRD660CT
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-MBRD650CTPbF, VS-MBRD660CTPbF
www.vishay.com
Vishay Semiconductors
Revision: 14-Jan-11
3
Document Number: 94314
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
0.1
1
10
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.4 0.6 0.8 1.0 1.2 1.4 1.60.2
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
0.001
1
10
100
0.1
0.01
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
10
20
50
60
30
40
0
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
20
10
30
40
60
50
0
T
J
= 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P7

VS-MBRD660CTTRLPBF

Mfr. #:
Buy VS-MBRD660CTTRLPBF
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VSMBRD660CTTRLM3
Lifecycle:
New from this manufacturer.
Delivery:
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