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MC100EP16VBDTR2G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 8
1 Publication Order Number:
MC100EP16VB/D
MC100EP16VB
3.3V / 5V ECL Differential
Receiver/Driver with High
and Low Gain
Description
The EP16VB is a world-class differential receiver/driver. The
device is functionally equivalent to the EP16 and LVEP16 devices but
with both high and low gain outputs. Q
HG
and Q
HG
outputs have a DC
gain several times larger than the DC gain of an EP16. Q
output is
provided for feedback purposes.
The V
BB
pin, an internally generated voltage supply, is available to
this device only. For single-ended input conditions, the unused
differential input is connected to V
BB
as a switching reference voltage.
V
BB
may also rebias AC coupled inputs. When used, decouple V
BB
and V
CC
via a 0.01ĂmF capacitor and limit current sourcing or sinking
to 0.5 mA. When not used, V
BB
should be left open.
Special considerations are required for differential inputs under No
Signal conditions to prevent instability.
The 100 Series contains temperature compensation.
Features
• Gain = > 200
• Maximum Frequency = > 3 GHz Typical
• PECL Mode Operating Range:
V
CC
= 3.0 V to 5.5 V with V
EE
= 0 V
• NECL Mode Operating Range:
V
CC
= 0 V with V
EE
= −3.0 V to −5.5 V
• V
BB
Output
• These Devices are Pb-Free, Halogen Free and are RoHS Compliant
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
M = Date Code
G = Pb-Free Package
SOIC−8 NB
D SUFFIX
CASE 751−07
MARKING DIAGRAMS*
TSSOP−8
DT SUFFIX
CASE 948R−02
ALYWG
G
KP65
1
8
1
8
www.onsemi.com
*For additional marking information, refer to
Application Note AND8002/D
.
1
8
KEP65
ALYW
G
1
8
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping†
MC100EP16VBDG SOIC−8 NB
(Pb-Free)
98 Units / Tube
MC100EP16VBDR2G
2500 Tape & Reel
TSSOP−8
(Pb-Free)
MC100EP16VBDTR2G 2500 Tape & Reel
MC100EP16VBDTG 100 Units / Tube
SOIC−8 NB
(Pb-Free)
TSSOP−8
(Pb-Free)
†For information on tape and reel specifications, in-
cluding part orientation and tape sizes, please refer
to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
.
SOIC−8 NB TSSOP−8
MC100EP16VB
www.onsemi.com
2
Figure 1. 8-Lead Pinout (Top View) and Logic
Diagram
1
2
3
45
6
7
8
Q
HG
V
EE
V
CC
D
Q
HG
D
V
BB
Q
Table 1. PIN DESCRIPTION
Pin Function
D*, D* ECL Data Inputs
Q ECL Data Output
Q
HG
, Q
HG
ECL High Gain Data Outputs
V
BB
Reference Voltage Output
V
CC
Positive Supply
V
EE
Negative Supply
*Pins will default LOW when left open.
Table 2. ATTRIBUTES
Characteristics Value
Internal Input Pulldown Resistor
75 kW
Internal Input Pullup Resistor N/A
ESD Protection
Human Body Model
Machine Model
Charged Device Model
> 4 kV
> 200 V
> 2 kV
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) Pb-Free Pkg
SOIC−8 NB
TSSOP−8
Level 1
Level 3
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
Transistor Count 167 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
MC100EP16VB
www.onsemi.com
3
Table 3. MAXIMUM RATINGS
Symbol Parameter Condition 1 Condition 2 Rating Unit
V
CC
PECL Mode Power Supply V
EE
= 0 V 6 V
V
EE
NECL Mode Power Supply V
CC
= 0 V −6 V
V
I
PECL Mode Input Voltage
NECL Mode Input Voltage
V
EE
= 0 V
V
CC
= 0 V
V
I
≤ V
CC
V
I
≥ V
EE
6
−6
V
V
I
out
Output Current Continuous
Surge
50
100
mA
I
BB
V
BB
Sink/Source ±0.5 mA
T
A
Operating Temperature Range −40 to +85 °C
T
stg
Storage Temperature Range −65 to +150 °C
q
JA
Thermal Resistance (Junction-to-Ambient) 0 lfpm
500 lfpm
SOIC−8 NB
SOIC−8 NB
190
130
°C/W
q
JC
Thermal Resistance (Junction-to-Case) Standard Board SOIC−8 NB 41 to 44 °C/W
q
JA
Thermal Resistance (Junction-to-Ambient) 0 lfpm
500 lfpm
TSSOP−8
TSSOP−8
185
140
°C/W
q
JC
Thermal Resistance (Junction-to-Case) Standard Board TSSOP−8 41 to 44 °C/W
T
sol
Wave Solder (Pb-Free) 265 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 4. 100EP DC CHARACTERISTICS, PECL (V
CC
= 3.3 V, V
EE
= 0 V (Note 1))
−40°C 25°C 85°C
Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit
I
EE
Power Supply Current 27 37 47 22 30 38 24 32 40 mA
V
OH
Output HIGH Voltage (Note 2) 2155 2280 2405 2155 2280 2405 2155 2280 2405 mV
V
OL
Output LOW Voltage (Note 2) 1305 1430 1555 1305 1400 1555 1305 1380 1555 mV
V
IH
Input HIGH Voltage (Single-Ended) 2075 2420 2075 2420 2075 2420 mV
V
IL
Input LOW Voltage (Single-Ended) 1355 1675 1355 1675 1355 1675 mV
V
BB
Output Voltage Reference 1775 1875 1975 1775 1875 1975 1775 1875 2045 mV
V
IHCMR
Input HIGH Voltage Common Mode Range
(Differential Configuration) (Note 3)
2.0 3.3 2.0 3.3 2.0 3.3 V
I
IH
Input HIGH Current 150 150 150
mA
I
IL
Input LOW Current 0.5 0.5 0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. Input and output parameters vary 1:1 with V
CC
. V
EE
can vary +0.3 V to −2.2 V.
2. All loading with 50 W to V
CC
− 2.0 V.
3. V
IHCMR
min varies 1:1 with V
EE
, V
IHCMR
max varies 1:1 with V
CC
. The V
IHCMR
range is referenced to the most positive side of the differential
input signal.
P1-P3P4-P6P7-P8

MC100EP16VBDTR2G

Mfr. #:
Buy MC100EP16VBDTR2G
Manufacturer:
ON Semiconductor
Description:
Bus Transceivers 3.3V/5V ECL with High and Low Gain
Lifecycle:
New from this manufacturer.
Delivery:
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