IXFH22N60P Datasheet IXFH22N60P, IXFV22N60PS, IXFV22N60P | P1-P3

G = Gate D = Drain

S = Source TAB = Drain

DS99315E(03/06)

PolarHV

TM

HiPerFET

Power MOSFETs

N-Channel Enhancement Mode

Fast Intrinsic Diode

Avalanche Rated

Features

l

Fast intrinsic diode

l

Unclamped Inductive Switching (UIS)

rated

l

International standard packages

l

Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 250 µA 600 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4 mA 3.0 5.5 V

I

GSS

V

GS

= ±30 V

DC

, V

DS

= 0 ±100 nA

I

DSS

V

DS

= V

DSS

25 µA

V

GS

= 0 V T

J

= 125° C 250 µA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

350 m Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25° C to 150° C 600 V

V

DGR

T

J

= 25° C to 150° C; R

GS

= 1 MΩ 600 V

V

GS

Continuous ±30 V

V

GSM

Tranisent ±40 V

I

D25

T

C

= 25° C22A

I

DM

T

C

= 25° C, pulse width limited by T

JM

66 A

I

AR

T

C

= 25° C22A

E

AR

T

C

= 25° C40mJ

E

AS

T

C

= 25° C 1.0 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

20 V/ns

T

J

≤ 150° C, R

G

= 4 Ω

P

D

T

C

= 25° C 400 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

T

SOLD

Plastic body for 10 s 260 °C

M

d

Mounting torque (TO-247) 1.13/10 Nm/lb.in.

F

C

Mounting Force (PLUS220) 11..65/2.5..15 Nm/lb.

Weight TO-247 6 g

PLUS220 & PLUS220SMD 4 g

G

D

S

TO-247 (IXFH)

V

DSS

= 600 V

I

D25

=22 A

R

DS(on)

≤≤

≤ 350 m

ΩΩ

Ω

t

rr

≤≤

≤ 200 ns

IXFH 22N60P

IXFV 22N60P

IXFV 22N60PS

D (TAB)

PLUS220 (IXFV)

G

S

PLUS220SMD (IXFV...S)

D (TAB)

G

S

D

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH 22N60P IXFV22N60P

IXFV 22N60PS

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 20 V; I

D

= 0.5 I

D25

, pulse test 15 20 S

C

iss

3600 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 305 pF

C

rss

38 pF

t

d(on)

20 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= I

D25

20 ns

t

d(off)

R

G

= 4 Ω (External) 60 ns

t

f

23 ns

Q

g(on)

58 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

20 nC

Q

gd

22 nC

R

thJC

0.31 ° C/W

R

thCS

0.21 ° C/W

Source-Drain Diode Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 22 A

I

SM

Repetitive 66 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

F

= 26A

-di/dt = 100 A/µs

V

R

= 100V, V

GS

= 0 V

Q

RM

1.0

200 ns

µC

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

PLUS220 (IXFV) Outline

TO-247 AD (IXFH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

1 2 3

PLUS220SMD (IXFV_S) Outline

IXFH 22N60P IXFV22N60P

IXFV 22N60PS

Fig. 2. Extended Output Characteristics

@ 25

º

C

0

5

10

15

20

25

30

35

40

45

0 3 6 9 12 15 18 21 24 27 30

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

6V

7.5V

7V

6.5V

Fig. 3. Output Characte ristics

@ 125

º

C

0

2

4

6

8

10

12

14

16

18

20

22

0 2 4 6 8 101214161820

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5.5V

5V

6V

6.5V

Fig. 1. Output Characte ristics

@ 25

º

C

0

2

4

6

8

10

12

14

16

18

20

22

0123456789

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

7.5V

Fig. 4. R

DS(on

)

Norm alize d to I

D

= 11A

Value vs. Junction Tem perature

0.4

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

3.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

D S ( o n )

- Normalized

I

D

= 22A

I

D

= 11A

V

GS

= 10V

Fig. 6. Drain Current vs. Case

Tem perature

0

4

8

12

16

20

24

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 5. R

DS(on)

Norm alized to

I

D

= 11A

Value vs. Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

0 5 10 15 20 25 30 35 40 45

I

D

- Amperes

R

D S ( o n )

- Normalized

T

J

= 125

º

C

T

J

= 25

º

C

V

GS

= 10V

IXFH22N60P

IXFH22N60P

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