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IXFV22N60P

P1-P3P4-P5
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 22N60P IXFV22N60P
IXFV 22N60PS
Fig. 11. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 1020 30405060
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 300V
I
D
= 11A
I
G
= 10mA
Fig. 7. Input Admittance
0
3
6
9
12
15
18
21
24
27
30
4.5 5 5.5 6 6.5 7 7.5 8
V
G S
- Volts
I
D
- Amperes
T
J
= 125
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
3
6
9
12
15
18
21
24
27
30
0 3 6 9 12 15 18 21 24 27 30
I
D
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 9. Source Curre nt vs .
Source-To-Drain Voltage
0
10
20
30
40
50
60
70
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
S D
- Volts
I
S
- Amperes
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 12. For w ar d-Bias
Safe Operating Area
1
10
100
10 100 1000
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 150ºC
T
C
= 25ºC
R
DS(on)
Limit
10ms
25µs
© 2006 IXYS All rights reserved
IXFH 22N60P IXFV22N60P
IXFV 22N60PS
Fig. 13. Maxim um Transient The rmal Resistance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R
( t h ) J C
-
º
C / W
IXYS REF: T_22N60P (6J) 02-17-06-B
P1-P3P4-P5

IXFV22N60P

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Buy IXFV22N60P
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Description:
IGBT Transistors MOSFET 600V 22A
Lifecycle:
New from this manufacturer.
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