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IRGS4B60KPBF

P1-P3P4-P6P7-P9P10-P12P13-P14
INSULATED GATE BIPOLAR TRANSISTOR
11/18/04
www.irf.com 1
IRGB4B60KPbF
IRGS4B60KPbF
IRGSL4B60KPbF
V
CES
= 600V
I
C
= 6.8A, T
C
=100°C
t
sc
> 10µs, T
J
=150°C
V
CE(on)
typ. = 2.1V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
• Lead-Free.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D
2
Pak
IRGS4B60KPbF
TO-262
IRGSL4B60KPbF
TO-220
IRGB4B60KPbF
E
C
G
n-channel
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C
Continuous Collector Current 12
I
C
@ T
C
= 100°C
Continuous Collector Current 6.8 A
I
CM
Pulse Collector Current (Ref.Fig.C.T.5) 24
I
LM
Clamped Inductive Load current
24
V
GE
Gate-to-Emitter Voltage ±20 V
P
D
@ T
C
= 25°C
Maximum Power Dissipation 63 W
P
D
@ T
C
= 100°C
Maximum Power Dissipation 31
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter Min. Typ. Max. Units
R
θ
JC
Junction-to-Case- IGBT ––– ––– 2.4 °C/W
R
θCS
Case-to-Sink, flat, greased surface ––– 0.50 –––
R
θ
JA
Junction-to-Ambient ––– ––– 62
R
θJA
Junction-to-Ambient (PCB Mount, steady state)
––– ––– 40
Wt
Weight ––– 1.44 ––– g
PD - 95643A
IRGB/S/SL4B60KPbF
2 www.irf.com
Note to are on page 16
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600 — — V
V
GE
= 0V, I
C
= 500µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
—0.28—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-150°C)
—2.12.5
I
C
= 4.0A, V
GE
= 15V, T
J
= 25°C
5,6,7
V
CE(on)
Collector-to-Emitter Voltage — 2.5 2.8 V
I
C
= 4.0A, V
GE
= 15V, T
J
= 150°C
9,10,11
—2.62.8
I
C
= 4.0A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 3.5 4.5 5.5 V
V
CE
= V
GE
, I
C
= 250µA
9,10,11
∆
V
GE(th)
/
∆
T
J
Threshold Voltage temp. coefficient — -8.1 —
mV/°C
V
CE
= V
GE
, I
C
= 1mA (25°C-150°C)
12
gfe Forward Transconductance — 1.7 — S
V
CE
= 50V, I
C
= 4.0A, PW = 80µs
—1.0150
V
GE
= 0V, V
CE
= 600V
I
CES
Zero Gate Voltage Collector Current — 54 300 µA
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
—300800
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
Q
g
Total Gate Charge (turn-on) — 12 —
I
C
= 4.0A
23
Q
ge
Gate-to-Emitter Charge (turn-on) — 1.7 — nC
V
CC
= 400V
CT1
Q
gc
Gate-to-Collector Charge (turn-on) — 6.5 —
V
GE
= 15V
E
on
Turn-On Switching Loss — 73 80
I
C
= 4.0A, V
CC
= 400V
CT4
E
off
Turn-Off Switching Loss — 47 53 µJ
V
GE
= 15V, R
G
= 100
Ω
, L = 2.5mH
E
tot
Total Switching Loss — 120 130
T
J
= 25°C
t
d(on)
Turn-On delay time — 22 28
I
C
= 4.0A, V
CC
= 400V
t
r
Rise time — 18 23 ns
V
GE
= 15V, R
G
= 100
Ω
, L = 2.5mH
CT4
t
d(off)
Turn-Off delay time — 100 110
T
J
= 25°C
t
f
Fall time — 66 80
E
on
Turn-On Switching Loss — 130 150
I
C
= 4.0A, V
CC
= 400V
CT4
E
off
Turn-Off Switching Loss — 83 140 µJ
V
GE
= 15V, R
G
= 100
Ω
, L = 2.5mH
13,15
E
tot
Total Switching Loss — 220 280
T
J
= 150°C
WF1,WF
2
t
d(on)
Turn-On delay time — 22 27
I
C
= 4.0A, V
CC
= 400V
14,16
t
r
Rise time — 18 22 ns
V
GE
= 15V, R
G
= 100Ω, L = 2.5mH
CT4
t
d(off)
Turn-Off delay time — 120 130
T
J
= 150°C
WF1
t
f
Fall time — 79 89 WF2
C
ies
Input Capacitance — 190 —
V
GE
= 0V
C
oes
Output Capacitance — 25 — pF
V
CC
= 30V
22
C
res
Reverse Transfer Capacitance — 6.2 — f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
T
J
= 150°C, I
C
= 24A, Vp = 600V
4
V
CC
=500V,V
GE
= +15V to 0V,R
G
= 100Ω
CT2
SCSOA Short Circuit Safe Operating Area 10 — — µs
T
J
= 150°C, Vp = 600V, R
G
= 100
Ω
CT3
V
CC
=360V,V
GE
= +15V to 0V
WF3
IRGB/S/SL4B60KPbF
www.irf.com 3
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
T
C
= 25°C; T
J
≤ 150°C
Fig. 4 - Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
0 20 40 60 80 100 120 140 160 180
T
C
(°C)
0
10
20
30
40
50
60
70
P
t
o
t
(
W
)
0 20 40 60 80 100 120 140 160 180
T
C
(°C)
0
2
4
6
8
10
12
I
C
(
A
)
10 100 1000
V
CE
(V)
0
1
10
100
I
C
A
)
0 1 10 100 1000 10000
V
CE
(V)
0.01
0.1
1
10
100
I
C
(
A
)
10ms
DC
1ms
100µs
P1-P3P4-P6P7-P9P10-P12P13-P14

IRGS4B60KPBF

Mfr. #:
Buy IRGS4B60KPBF
Manufacturer:
Infineon Technologies
Description:
IGBT 600V D2PAK-3
Lifecycle:
New from this manufacturer.
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