www.vishay.com Document Number: 91207
2 S11-0446-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
IRFP22N50A, SiHFP22N50A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-40
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
0.24 -
Maximum Junction-to-Case (Drain) R
thJC
-0.45
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 µA 500 - -
V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.55 -
V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 2.0 -
4.0
V
Gate-Source Leakage I
GSS
V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 500 V, V
GS
= 0 V - - 25
µA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 13 A
b
--0.23
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 13 A
b
12 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 3450 -
pF
Output Capacitance C
oss
- 513 -
Reverse Transfer Capacitance C
rss
-27-
Output Capacitance C
oss
V
GS
= 0 V
V
DS
= 1.0 V, f = 1.0 MHz 4935
V
DS
= 400 V, f = 1.0 MHz 137
Effective Output Capacitance C
oss
eff. V
DS
= 0 V to 400 V
c
264
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 22 A, V
DS
= 400 V,
see fig. 6 and 13
b
- - 120
nC Gate-Source Charge Q
gs
--32
Gate-Drain Charge Q
gd
--52
Turn-On Delay Time t
d(on)
V
DD
= 250 V, I
D
= 22 A,
R
G
= 4.3 , R
D
= 11, see fig. 10
b
-26-
ns
Rise Time t
r
-94-
Turn-Off Delay Time t
d(off)
-47-
Fall Time t
f
-47-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--22
A
Pulsed Diode Forward Current
a
I
SM
--88
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 22A, V
GS
= 0 V
b
--1.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 22 A, dI/dt = 100 A/µs
b
- 570 850 ns
Body Diode Reverse Recovery Charge Q
rr
-6.19.2µC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
