HUFA75617D3S

©2001 Fairchild Semiconductor Corporation HUFA75617D3 Rev. B
PSPICE Electrical Model
.SUBCKT HUFA75617d3 2 1 3 ; rev 24May 2000
CA 12 8 9.9e-10
CB 15 14 1.0e-9
CIN 6 8 5.4e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 117.8
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 5.24e-9
LSOURCE 3 7 4.25e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 3.9e-2
RGATE 9 20 2.45
RLDRAIN 2 5 10
RLGATE 1 9 52.4
RLSOURCE 3 7 42.5
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 3.2e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*32),3.5))}
.MODEL DBODYMOD D (IS = 6.0e-13 RS = 11.0e-3 XTI = 4.5 TRS1 = 1.1e-3 TRS2 = 7.1e-6 CJO = 6.5e-10 TT = 4.1e-8 M = 0.54)
.MODEL DBREAKMOD D (RS = 5.6e- 1TRS1 = 8.0e- 4TRS2 = 3.0e-6)
.MODEL DPLCAPMOD D (CJO = 7.0e-1 0IS = 1e-3 0M = 0.89 N = 10)
.MODEL MMEDMOD NMOS (VTO = 3.10 KP = 3 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.45)
.MODEL MSTROMOD NMOS (VTO = 3.64 KP = 42 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.68 KP = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 24.5)
.MODEL RBREAKMOD RES (TC1 = 1.05e- 3TC2 = -5.0e-7)
.MODEL RDRAINMOD RES (TC1 = 1.20e-2 TC2 = 3.00e-5)
.MODEL RSLCMOD RES (TC1 = 3.2e-3 TC2 = 1.0e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -2.2e-3 TC2 = -9.0e-6)
.MODEL RVTEMPMOD RES (TC1 = -2.4e- 3TC2 = -1.8e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.9 VOFF= -3.1)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.1 VOFF= -5.9)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.6 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -0.6)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17 18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
11
7
3
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
10
5
51
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
-
+
-
6
HUFA75617D3
©2001 Fairchild Semiconductor Corporation HUFA75617D3 Rev. B
SABER Electrical Model
REV 24 May 2000
template HUFA75617d3 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl = 6.0e-13, rs = 11.0e-3, xti = 4.5, trs1 = 1.1e-3, trs2 = 7.1e-6, cjo = 6.5e-10, tt = 4.1e-8, m = 0.54)
dp..model dbreakmod = (rs = 5.6e-1, trs1 = 8.0e-4, trs2 = 3.0e-6)
dp..model dplcapmod = (cjo = 7.0e-10, isl = 10e-30, m = 0.89, nl = 10)
m..model mmedmod = (type=_n, vto = 3.10, kp = 3, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.64, kp = 42, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.68, kp = 0.02, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -5.9, voff = -3.1)
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -3.1, voff = -5.9)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.6, voff = 0.5)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = -0.6)
c.ca n12 n8 = 9.9e-10
c.cb n15 n14 = 1.0e-9
c.cin n6 n8 = 5.4e-10
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1.0e-9
l.lgate n1 n9 = 5.24e-9
l.lsource n3 n7 = 4.25e-9
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1 = 1.05e-3, tc2 = -5.0e-7
res.rdrain n50 n16 = 3.9e-2, tc1 = 1.20e-2, tc2 = 3.00e-5
res.rgate n9 n20 = 2.45
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 52.4
res.rlsource n3 n7 = 42.5
res.rslc1 n5 n51 = 1e-6, tc1 = 3.2e-3, tc2 = 1.0e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 3.2e-2, tc1 = 1e-3, tc2 = 1e-6
res.rvtemp n18 n19 = 1, tc1 = -2.4e-3, tc2 = 1.8e-6
res.rvthres n22 n8 = 1, tc1 = -2.2e-3, tc2 = -9.0e-6
spe.ebreak n11 n7 n17 n18 = 117.8
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/32))** 3.5))
}
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17 18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
11
7
3
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
10
5
51
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
-
+
-
6
HUFA75617D3
©2001 Fairchild Semiconductor Corporation HUFA75617D3 Rev. B
SPICE Thermal Model
REV 24 May 2000
HUFA75617D
CTHERM1 th 6 1.00e-3
CTHERM2 6 5 4.00e-3
CTHERM3 5 4 4.00e-3
CTHERM4 4 3 3.60e-3
CTHERM5 3 2 7.00e-3
CTHERM6 2 tl 5.00e-2
RTHERM1 th 6 1.59e-2
RTHERM2 6 5 3.96e-2
RTHERM3 5 4 1.12e-1
RTHERM4 4 3 4.27e-1
RTHERM5 3 2 6.45e-1
RTHERM6 2 tl 7.00e-1
SABER Thermal Model
SABER thermal model HUFA75617D
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 1.00e-3
ctherm.ctherm2 6 5 = 4.00e-3
ctherm.ctherm3 5 4 = 4.00e-3
ctherm.ctherm4 4 3 = 3.60e-3
ctherm.ctherm5 3 2 = 7.00e-3
ctherm.ctherm6 2 tl = 5.00e-2
rtherm.rtherm1 th 6 = 1.59e-2
rtherm.rtherm2 6 5 = 3.96e-2
rtherm.rtherm3 5 4 = 1.12e-1
rtherm.rtherm4 4 3 = 4.27e-1
rtherm.rtherm5 3 2 = 6.45e-1
rtherm.rtherm6 2 tl = 7.00e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
HUFA75617D3

HUFA75617D3S

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 100V 16A DPAK
Lifecycle:
New from this manufacturer.
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