7
2003 Semtech Corp.
www.semtech.com
POWER MANAGEMENT
SC2621
Applications Information (Cont.)
150
175
200
225
250
275
300
325
350
0 100 200 300 400 500 600
Rset (k-ohm)
Vpn (mV)
150
175
200
225
250
275
300
325
350
0 100 200 300 400 500 600
Rset (k-ohm)
Vpn (mV)
Fig. 2. Pull down resistor for current limit setting
The manufacture data and bench tested results show
that, for low R
dson MOSFETs run at applied load current,
the optimum gate drive voltage is around 8.2V, where
the total power losses of power MOSFETs are minimized.
COMPONENT SELECTIONCOMPONENT SELECTION
COMPONENT SELECTIONCOMPONENT SELECTION
COMPONENT SELECTION
General design guideline of switching power supplies can
be applied to the component selection for the SC2621.
InductInduct
InductInduct
Induct
or and MOSFETor and MOSFET
or and MOSFETor and MOSFET
or and MOSFET
ss
ss
s
The selection of inductor and MOSFETs should meet ther-
mal requirement because they are power loss dominant
components. Pick an inductor with as high inductance
as possible without adding extra cost and size. The higher
inductance, the lower ripple current, the smaller core loss
and the higher efficiency will be. However, too high in-
ductance slows down output transient response. It is rec-
ommended to choose the inductance that gives the in-
ductor ripple current to be approximate 20% of maxi-
mum load current. So choose inductor value from:
)1(
5
IN
O
O
oscO
V
V
V
fI
L -××
×
=
The MOSFETs are selected from their Rdson, gate charge,
and package. The SC2621 provides 1.5A gate drive cur-
rent. To drive a 50nC gate charge MOSFET gives 50nC/
1.5A=33ns switching time. The switching time ts contrib-
utes to the top MOSFET switching loss:
OSCSINOS
ftVIP ×××=
There is no significant switching loss for the bottom
MOSFET because of its zero voltage switching. The con-
duction losses of the top and bottom MOSFETs are given
by:
DRIP
dsonOTOPC
××=
2
_
)1(
2
_
DRIP
dsonOBOTC
-××=
If the requirement of total power losses for each MOSFET
is given, the above equations can be used to calculate
the values of Rdson and gate charge can be calculated
using above equations, then the devices can be deter-
mined accordingly. The solution should ensure the
MOSFET is within its maximum junction temperature at
highest ambient temperature.
Output CapacitorOutput Capacitor
Output CapacitorOutput Capacitor
Output Capacitor
The output capacitors should be selected to meet both
output ripple and transient response criteria. The output
capacitor ESR causes output ripple V
RIPPLE during the
inductor ripple current flowing in. To meet output ripple
criteria, the ESR value should be:
)1(
IN
O
O
RIPPLEOSC
ESR
V
V
V
VfL
R
-×
××
<
The output capacitor ESR also causes output voltage tran-
sient VT during a transient load current IT flowing in. To
meet output transient criteria, the ESR value should be:
T
T
ESR
I
V
R <
To meet both criteria, the smaller one of above two ESRs
is required.
The output capacitor value also contributes to load tran-
sient response. Based on a worst case where the induc-
tor energy 100% dumps to the output capacitor during
the load transient, the capacitance then can be calcu-
lated by:
2
2
T
T
V
I
LC ×>
82003 Semtech Corp.
www.semtech.com
POWER MANAGEMENT
SC2621
Applications Information (Cont.)
Input CapacitorInput Capacitor
Input CapacitorInput Capacitor
Input Capacitor
The input capacitor should be chosen to handle the RMS
ripple current of a synchronous buck converter. This value
is given by:
22
)()1(
INoINRMS
IIDIDI -×+×-=
where Io is the load current, IIN is the input average cur-
rent, and D is the duty cycle. Choosing low ESR input
capacitors will help maximize ripple rating for a given size.
MOSFET for Linear RegulatorMOSFET for Linear Regulator
MOSFET for Linear RegulatorMOSFET for Linear Regulator
MOSFET for Linear Regulator
The MOSFET in linear regulator operates in linear region
with really high power loss. A device with a suitable pack-
age has to be selected to handle the loss. To prevent too
high load current during short circuit, the R
dson of the
MOSFET should not be selected too low. A good choice is
to select a MOSFET so that it is almost fully turned on at
maximum load current. For example, in a LDO design with
3.3V in and 1.5V/2A out, a MOSFET with 600 to 800m-
ohm Rdson can be chosen.
Bootstrap CircuitBootstrap Circuit
Bootstrap CircuitBootstrap Circuit
Bootstrap Circuit
The SC2621 uses an external bootstrap circuit to pro-
vide a voltage at BST pin for the top MOSFET drive. This
voltage, referring to the Phase Node, is held up by a
bootstrap capacitor. Typically, it is recommended to use
a 1uF ceramic capacitor with 16V rating and a commonly
available diode IN4148 for the bootstrap circuit.
Filters for Supply PowerFilters for Supply Power
Filters for Supply PowerFilters for Supply Power
Filters for Supply Power
For each pin of DRV and Vcc, it is recommended to use a
1uF/16V ceramic capacitor for decoupling. In addition,
place a small resistor (10 ohm) in between Vcc pin and
the supply power for noise reduction.
CONTROL LOOP DESIGNCONTROL LOOP DESIGN
CONTROL LOOP DESIGNCONTROL LOOP DESIGN
CONTROL LOOP DESIGN
The goal of compensation is to shape the frequency re-
sponse charateristics of the buck converter to achieve a
better DC accuracy and a faster transient response for
the output voltage, while maintaining the loop stability.
The block diagram in Fig. 3 represents the control loop
of a buck converter designed with the SC2621. The con-
trol loop consists of a compensator, a PWM modulator,
and a LC filter.
The LC filter and PWM modulator represent the small
signal model of the buck converter operating at fixed
switching frequency. The transfer function of the model
is given by:
LCsRsL
CsR
V
V
V
V
ESR
m
IN
C
O
2
/1
1
++
+
×=
where VIN is the power rail voltage, Vm is the amplitude
of the 500kHz ramp, and R is the equivalent load.
L Vo
Co
SC2621 AND MOSFETS
FB
OUT
COMP
PWM
MODULATOR
REF
+
-
EA
Resr
Zf
Zs
Vc
Fig. 3. Block diagram of the control loop
The model is a second order system with a finite DC gain,
a complex pole pair at Fo, and an ESR zero at Fz, as
shown in Fig. 4. The locations of the poles and zero are
determined by:
LC
F
O
1
=
CR
F
ESR
Z
1
=
The compensator in Fig. 3 includes an error amplifier and
impedance networks Zf and Zs. It is implemented by the
circuit in Fig. 5. The compensator provides an integrator,
double poles and double zeros. As shown in Fig. 4, the
integrator is used to boost the gain at low frequency.
Two zeros are introduced to compensate excessive phase
lag at the loop gain crossover due to the integrator
(-90deg) and complex pole pair (-180deg). Two high fre-
quency poles are designed to compensate the ESR zero
9
2003 Semtech Corp.
www.semtech.com
POWER MANAGEMENT
SC2621
Applications Information (Cont.)
and attenuate high frequency noise.
100 1K 10K 100K 1M
-60
-30
0
30
60
Fo
Fz
Fz1
Fz2
Fp1 Fp2
Fc
GAIN (dB)
FREQUENCY (Hz)
COMPENSATOR GAIN
C
O
N
V
E
R
T
E
R
G
A
I
N
L
O
O
P
G
A
I
N
100 1K 10K 100K 1M
-60
-30
0
30
60
Fo
Fz
Fz1
Fz2
Fp1 Fp2
Fc
GAIN (dB)
FREQUENCY (Hz)
COMPENSATOR GAIN
C
O
N
V
E
R
T
E
R
G
A
I
N
L
O
O
P
G
A
I
N
Fig. 4. Bode plots for control loop design
Rb ot
Vo
C1
VREF
0.5V
R2 R3
Rt op
-
+
3
2
1
C2
C3
Vc
Fig. 5. Compensation network
The top resistor R
top of the voltage divider in Fig. 5 can
be chosen from 1k to 5k. Then the bottom resistor Rbot
is found from:
top
O
bot
R
VV
V
R ×
-
=
5.0
5.0
where 0.5V is the internal reference voltage of the
SC2621.
The other components of the compensator can be cal-
culated using following design procedure:
(1). Plot the converter gain, including LC filter and PWM
modulator.
(2). Select the open loop crossover frequency Fc located
at 10% to 20% of the switching frequency. At Fc, find the
required DC gain.
(3). Use the first compensator pole Fp1 to cancel the
ESR zero Fz.
(4). Have the second compensator pole Fp2 at half the
switching frequency to attenuate the switching ripple and
high frequency noise.
(5). Place the first compensator zero Fz1 at or below
50% of the power stage resonant frequency Fo.
(6). Place the second compensator zero Fz2 at or below
the power stage resonant frequency Fo.
A MathCAD program is available upon request for the
calculation of the compensation parameters.
LALA
LALA
LA
YY
YY
Y
OUT GUIDELINESOUT GUIDELINES
OUT GUIDELINESOUT GUIDELINES
OUT GUIDELINES
The switching regulator is a high di/dt power circuit. Its
Printed Circuit Board (PCB) layout is critical. A good lay-
out can achieve an optimum circuit performance while
minimizing the component stress, resulting in better sys-
tem reliability. During PCB layout, the SC2621 controller,
MOSFETs, inductor, and power decoupling capacitors have
to be considered as a unit.
The following guidelines are typically recommended for
using the SC2621 controller.
(1). Place a 4.7uF to 10uF ceramic capacitor close to
the drain of top MOSFET for the high frequency and high
current decoupling. The loop formed by the capacitor,
the top and bottom MOSFETs must be as small as pos-
sible. Keep the input bulk capacitors close to the drain
of the top MOSFETs.
(2). Place the SC2621 over a quiet ground plane to avoid
pulsing current noise. Keep the ground return of the gate
drive short.
(3). Connect bypass capacitors as close as possible to
the decoupling pins (DRV and Vcc) to the ground pin GND.
The trace length of the decoupling capasitor on DRV pin
should be no more than 0.2” (5mm).
(4). Locate the components of the bootstrap circuit close
to the SC2621.

SC2621STRT

Mfr. #:
Manufacturer:
Semtech
Description:
Switching Controllers SWITCHING CONTROLLER
Lifecycle:
New from this manufacturer.
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