CDBQR54
Page 1
QW-A1122
REV:B
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Symbol
Typ
Parameter
Conditions Min
Max
Unit
Forward voltage
IF = 1mA
IF = 0.1mA
IF = 10mA
IF = 30mA
IF = 100mA
VF V
0.32
0.24
0.4
0.5
1
Reverse current
IR
uA
VR = 25V
Capacitance between terminals
Reverse recovery time
f = 1 MHz, and 1 VDC reverse voltage
IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm
CT
Trr
pF
nS
5
10
2
O
Maximum Rating (at TA=25 C unless otherwise noted)
Typ
IO
IFSM
VR(RMS)
VR
VRM
IFRM
Repetitive peak forward current
Average forward rectified current
Reverse voltage
Peak reverse voltage
Forward current,surge peak
Symbol
Parameter
Conditions
Min
Max
Unit
RMS reverse voltage
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
A
A
mA
V
V
V
0.6
0.3
200
21
30
30
PD
Power dissipation
mW
125
O
C
+125TSTG
Tj
Storage temperature
Junction temperature
O
C
+125
-65
Comchip Technology CO., LTD.
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
Dimensions in inches and (millimeter)
0.020(0.50) Typ.
0.022(0.55)
0.018(0.45)
0.012(0.30) Typ.
SMD Schottky Barrier Diode
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0402/SOD-923F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking Code: Cathode band & BF
-Mounting position: Any.
-Weight: 0.001 gram(approx.).
Io = 200 mA
VR = 30 Volts
RoHS Device
0402/SOD-923F
