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FGB20N6S2D

P1-P3P4-P6P7-P9
©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves (Continued)
E
ON2
, TURN-ON ENERGY LOSS ( µJ)
150
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
200
0
400
246810 140
300
250
350
50
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
12
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
R
G
= 25Ω, L = 500µH, V
CE
= 390V
E
OFF
TURN-OFF ENERGY LOSS (µJ)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
246810 14012
150
100
200
0
350
300
250
50
R
G
= 25Ω, L = 500µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(ON)I
, TURN-ON DELAY TIME (ns)
6
7
8
9
10
2 4 6 8 10 140
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
11
12
13
12
R
G
= 25Ω, L = 500µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
, RISE TIME (ns)
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
=15V
2 4 6 8 10 14012
0
5
10
15
20
25
30
35
R
G
= 25Ω, L = 500µH, V
CE
= 390V
80
60
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
140
120
100
V
GE
= 10V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 10V, V
GE
= 15V, T
J
= 125
o
C
2 4 6 8 10 14012
R
G
= 25Ω, L = 500µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, FALL TIME (ns)
T
J
= 25
o
C, V
GE
= 10V or 15V
T
J
= 125
o
C, V
GE
= 10V or 15V
2 4 6 8 10 14012
60
40
120
100
80
R
G
= 25Ω, L = 500µH, V
CE
= 390V
©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Figure 13. Transfer Characteristic Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
20
40
V
GE
, GATE TO EMITTER VOLTAGE (V)
60
120
T
J
= 125
o
C
T
J
= -55
o
C
100
80
T
J
= 25
o
C
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
CE
= 10V
6 8 10 12 14 164
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
I
G(REF)
= 1mA, R
L
= 42.6Ω, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 600V
V
CE
= 400V
5 10152025 35030
6
4
8
0
16
12
10
14
2
T
C
, CASE TEMPERATURE (
o
C)
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
R
G
= 25Ω, L = 500µH, V
CE
= 390V, V
GE
= 15V
I
CE
= 14A
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 7A
I
CE
= 3A
0.2
0
0.8
0.6
0.4
5025 75 100 125 150
R
G
, GATE RESISTANCE (Ω)
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
E
TOTAL
= E
ON2
+ E
OFF
T
J
= 125
o
C, L = 500µH, V
CE
= 390V, V
GE
= 15V
0.1
0.05
10
1
I
CE
= 14A
1 10 100 1000
I
CE
= 7A
I
CE
= 3A
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
C
RES
0 1020304050
0.0
0.4
1.2
0.8
FREQUENCY = 1MHz
C
OES
C
IES
60 70 80 90 100
0.2
0.6
1.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
2.0
9
2.2
2.6
2.4
8101112 16
2.8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250µs, T
J
= 25
o
C
3.6
7131415
DUTY CYCLE < 0.5%
I
CE
= 14A
5
I
CE
= 3A
I
CE
= 7A
3.0
3.2
3.4
©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Figure 19. Diode Forward Current vs Forward
Voltage Drop
Figure 20. Recovery Times vs Forward Current
Figure 21. Recovery Times vs Rate of Change of
Current
Figure 22. Stored Charge vs Rate of Change of
Current
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
Typical Performance Curves (Continued)
0.5 1.0 1.5 2.5
I
EC
, FORWARD CURRENT (A)
V
EC
, FORWARD VOLTAGE (V)
02.0
0
2
25
o
C
125
o
C
14
8
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%,
3.0
4
6
12
10
200
100
0
t
rr
, REVERSE RECOVERY TIMES (ns)
I
EC
, FORWARD CURRENT (A)
01442
125
o
C t
a
125
o
C t
b
, t
rr
128106
dI
EC
/dt = 200A/µs, V
CE
= 390V
50
150
250
25
o
C t
b
, t
rr
25
o
t
a
25
o
C t
b
I
EC
= 7A, V
CE
= 390V
t
a
, t
b
, REVERSE RECOVERY TIMES (ns)
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
µ
s)
40
0
60
80
100
160
20
1000200 300 600400 500
125
o
C t
b
125
o
C t
a
25
o
C t
a
140
120
700 800 900
250
200
150
100
Q
rr
, REVERSE RECOVERY CHARGE (nC)
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
µ
s)
300
500
125
o
C, I
EC
= 7A
125
o
C, I
EC
= 3.5A
25
o
C, I
EC
= 3.5A
25
o
C, I
EC
= 7A
V
CE
= 390V
350
1000200 300 600400 500 700 800 900
450
400
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
µ
s)
3.0
5.0
4.5
6.0
5.5
I
EC
= 3.5A
S, REVERSE RECOVERY SOFTNESS FACTOR
4.0
3.5
1000200 300 600400 500 700 800 900
I
EC
= 7A
V
CE
= 390V, T
J
= 125°C
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
µ
s)
3
5
4
10
6
I
EC
= 7A
I
EC
= 3.5A
IRRM, MAX REVERSE RECOVERY CURRENT (A)
7
V
CE
= 390V, T
J
= 125°C
9
8
1000200 300 600400 500 700 800 900
P1-P3P4-P6P7-P9

FGB20N6S2D

Mfr. #:
Buy FGB20N6S2D
Manufacturer:
ON Semiconductor / Fairchild
Description:
Motor / Motion / Ignition Controllers & Drivers Comp N-Ch 600V
Lifecycle:
New from this manufacturer.
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