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2N5307

P1-P3P4-P4
©2002 Fairchild Semiconductor Corporation Rev. B, July 2002
2N5307
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base Voltage 40 V
V
EBO
Emitter-Base Voltage 12 V
I
C
Collector Current - Continuous 1.2 A
T
J
, T
ST
Operating and Storage Junction Temperature Range -55 ~ +150 °C
2N5307
NPN General Purpose Amplifier
• This device designed for applications requiring extremely high current
gain at currents to 1.0A.
• Sourced from Process 05.
• See MPSA14 for characteristics.
TO-92
1. Emitter 2. Collector 3. Base
1
©2002 Fairchild Semiconductor Corporation Rev. B, July 2002
2N5307
Electrical Characteristics T
a
=25°C unless otherwise noted
* Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
BV
(BR)CEO
Collector-Emitter Breakdown Voltage * I
C
= 10mA, I
B
= 0 40 V
BV
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 0.1µA, I
E
= 0 40 V
BV
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 0.1µA, I
C
= 0 12 V
I
CBO
Collector Cut-off Current V
CB
= 40V, I
E
= 0
V
CB
= 40V, I
E
= 0, TA = 100°C
0.1
20
µA
µA
I
EBO
Reverse Base Current V
EB
= 12V, I
C
= 0 0.1 µA
On Characteristics *
h
FE
DC Current Gain V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 100mA
2,000
6,000
20,000
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 200mA, I
B
= 0.2mA 1.4 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 200mA, I
B
= 0.2mA 1.6 V
V
BE
(on) Base-Emitter On Voltage I
C
= 200mA,V
CE
= 5.0V 1.5 V
Small Signal Characteristics
C
ob
Output Capacitance V
CB
= 10V, f = 1.0MHz 10 pF
h
fe
Small-Signal Current Gain I
C
= 2.0mA, V
CE
= 5.0V,
f = 1.0kHz
I
C
= 2.0mA, V
CE
= 5.0V,
f = 10MHz
2,000
6.0
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 83.3 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 200 °C/W
2N5307
Package Dimensions
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B, July 2002
0.46
±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27
±0.20
]
1.27TYP
[1.27
±0.20
]
3.60
±0.20
14.47
±0.40
1.02
±0.10
(0.25)
4.58
±0.20
4.58
+0.25
–0.15
0.38
+0.10
–0.05
0.38
+0.10
–0.05
TO-92
P1-P3P4-P4

2N5307

Mfr. #:
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Manufacturer:
ON Semiconductor / Fairchild
Description:
Darlington Transistors NPN Transistor Darlington
Lifecycle:
New from this manufacturer.
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