HPND-4038

4
Typical S-Parameters (in series conguration) at Z
O
= 50, 25°C (cont.)
HPND-4038
Freq.
I
F
= 1 mA I
F
= 5 mA I
F
= 10 mA
S
11
/S
22
S
21
/S
12
S
11
/S
22
S
21
/S
12
S
11
/S
22
S
21
/S
12
(MHz) Mag. Ang. dB Mag. Ang. Mag. Ang. dB Mag. Ang. Mag. Ang. dB Mag. Ang.
1000 0.028 15 -0.22 0.976 -1 0.019 28 -0.12 0.987 -1 0.017 35 -0.10 0.989 -1
2000 0.032 34 -0.24 0.974 -2 0.026 50 -0.16 0.984 -2 0.024 56 -0.14 0.986 -2
3000 0.037 47 -0.22 0.975 -3 0.034 61 -0.14 0.985 -3 0.033 66 -0.12 0.988 -4
4000 0.045 55 -0.22 0.975 -5 0.042 67 -0.14 0.985 -5 0.042 70 -0.12 0.987 -5
5000 0.052 61 -0.24 0.974 -6 0.051 72 -0.16 0.984 -6 0.051 75 -0.14 0.986 -6
6000 0.060 65 -0.24 0.974 -7 0.059 74 -0.16 0.984 -7 0.059 77 -0.14 0.986 -7
7000 0.067 67 -0.24 0.974 -8 0.067 76 -0.16 0.984 -8 0.067 78 -0.12 0.987 -8
8000 0.073 69 -0.24 0.974 -9 0.074 76 -0.16 0.983 -9 0.073 78 -0.14 0.986 -9
9000 0.081 70 -0.24 0.973 -10 0.081 77 -0.16 0.984 -10 0.081 78 -0.14 0.986 -10
10000 0.087 71 -0.24 0.974 -11 0.088 77 -0.16 0.982 -11 0.089 79 -0.14 0.986 -11
11000 0.092 71 -0.22 0.975 -12 0.094 77 -0.16 0.984 -12 0.094 79 -0.14 0.986 -12
12000 0.099 70 -0.24 0.974 -14 0.100 76 -0.16 0.984 -14 0.101 77 -0.14 0.986 -14
13000 0.104 70 -0.22 0.975 -15 0.106 75 -0.14 0.985 -15 0.107 76 -0.12 0.987 -15
14000 0.110 69 -0.26 0.972 -16 0.112 74 -0.16 0.982 -16 0.113 75 -0.16 0.984 -16
15000 0.118 67 -0.24 0.973 -17 0.119 72 -0.16 0.983 -17 0.120 73 -0.14 0.985 -17
16000 0.123 66 -0.24 0.973 -18 0.125 71 -0.16 0.982 -18 0.126 72 -0.16 0.984 -18
17000 0.132 64 -0.26 0.972 -19 0.133 68 -0.16 0.982 -19 0.133 69 -0.16 0.984 -19
18000 0.141 62 -0.26 0.972 -20 0.143 66 -0.18 0.980 -20 0.143 67 -0.16 0.983 -20
HPND-4038
Freq.
V
R
= 0 V V
R
= 10 V V
R
= 30 V
S
11
/S
22
S
21
/S
12
S
11
/S
22
S
21
/S
12
S
11
/S
22
S
21
/
S
12
(MHz) Mag. Ang. dB Mag. Ang. Mag. Ang. dB Mag. Ang. Mag. Ang. dB Mag. Ang.
1000 0.993 -5 -23.10 0.070 83 0.998 -3 -28.88 0.036 89 0.999 -3 -29.90 0.032 90
2000 0.976 -10 -17.28 0.137 76 0.995 -7 -22.86 0.072 84 0.996 -6 -23.76 0.065 85
3000 0.953 -15 -14.04 0.199 70 0.990 -10 -19.26 0.109 81 0.992 -9 -20.18 0.098 82
4000 0.923 -19 -11.88 0.255 64 0.982 -13 -16.78 0.145 78 0.986 -12 -17.74 0.130 79
5000 0.890 -23 -10.36 0.304 58 0.973 -16 -14.90 0.180 74 0.977 -15 -15.88 0.161 75
6000 0.857 -27 -9.20 0.347 53 0.962 -20 -13.40 0.214 71 0.968 -19 -14.30 0.193 73
7000 0.822 -31 -8.28 0.386 49 0.947 -23 -12.08 0.249 68 0.956 -22 -12.96 0.225 69
8000 0.790 -34 -7.58 0.418 45 0.933 -27 -11.06 0.280 65 0.945 -25 -11.92 0.254 66
9000 0.757 -38 -7.00 0.447 41 0.915 -30 -10.12 0.312 61 0.928 -29 -10.94 0.284 63
10000 0.727 -41 -6.54 0.471 38 0.897 -34 -9.40 0.339 58 0.912 -32 -10.22 0.309 61
11000 0.697 -44 -6.10 0.496 34 0.877 -37 -8.62 0.371 54 0.892 -35 -9.44 0.338 57
12000 0.668 -46 -5.74 0.517 32 0.854 -41 -8.00 0.399 52 0.874 -38 -8.76 0.365 54
13000 0.643 -49 -5.56 0.528 29 0.834 -44 -7.60 0.417 49 0.854 -42 -8.34 0.383 51
14000 0.620 -51 -5.22 0.549 26 0.813 -47 -7.04 0.445 45 0.839 -45 -7.76 0.410 48
15000 0.599 -53 -5.16 0.553 24 0.793 -50 -6.82 0.457 43 0.818 -48 -7.50 0.422 45
16000 0.584 -55 -4.90 0.569 21 0.778 -53 -6.42 0.478 39 0.805 -50 -7.10 0.442 42
17000 0.570 -57 -4.80 0.576 19 0.762 -55 -6.22 0.489 37 0.790 -53 -6.88 0.453 40
18000 0.556 -59 -4.84 0.574 17 0.747 -58 -6.18 0.491 35 0.776 -55 -6.86 0.454 37
5
Bonding and Handling Procedures for Beam Lead Diodes
1. Storage
Under normal circumstances, storage of beam lead
diodes in Avago supplied wae/gel packs is sucient.
In particularly dusty or chemically hazardous environ-
ments, storage in an inert atmosphere desiccator is
advised.
2. Handling
In order to avoid damage to beam lead devices, par-
ticular care must be exercised during inspection,
testing, and assembly. Although the beam lead diode
is designed to have exceptional lead strength, its small
size and delicate nature requires that special handling
techniques be observed so that the devices will not be
mechanically or electrically damaged. A vacuum pickup
is recommended for picking up beam lead devices, par-
ticularly larger ones, e.g., quads. Care must be exercised
to assure that the vacuum opening of the needle is suf-
ciently small to avoid passage of the device through
the opening. A #27 tip is recommended for picking up
single beam lead devices. A 20X magnication is needed
for precise positioning of the tip on the device. Where a
vacuum pickup is not used, a sharpened wooden Q-tip
dipped in isopropyl alcohol is very commonly used to
handle beam lead devices.
3. Cleaning
For organic contamination use a warm rinse of trichlo-
roethane, or its locally approved equivalent, followed by
a cold rinse in acetone and methanol. Dry under infrared
heat lamp for 5–10 minutes on clean lter paper. Freon
degreaser, or its locally approved equivalent, may
replace trichloroethane for light organic contamination.
Ultrasonic cleaning is not recommended.
Acid solvents should not be used.
4. Bonding
Thermocompression: See Application Note 979 The
Handling and Bonding of Beam Lead Devices Made
Easy. This method is good for hard substrates only.
Wobble: This method picks up the device, places it on
the substrate and forms a thermo-compression bond all
in one operation. This is described in the latest version
of MIL-STD-883, Method 2017, and is intended for hard
substrates only.
Resistance Welding or Parallel-GAP Welding: To make
welding on soft substrates easier, a low pressure welding
head is recommended. Suitable equipment is available
from HUGHES, Industrial Products Division in Carlsbad,
CA.
Epoxy: With solvent free, low resistivity epoxies
(available from ABLESTIK and improvements in dispens-
ing equipment, the quality of epoxy bonds is sucient
for many applications.
5. Lead Stress
In the process of bonding a beam lead diode, a certain
amount of “bugging” occurs. The term bugging refers
to the chip lifting away from the substrate during the
bonding process due to the deformation of the beam by
the bonding tool. This eect is benecial as it provides
stress relief for the diode during thermal cycling of the
substrate. The coecient of expansion of some substrate
materials, specically soft substrates, is such that some
bugging is essential if the circuit is to be operated over
wide temperature extremes.
Thick metal clad ground planes restrict the thermal
expansion of the dielectric substrates in the X-Y axis.
The expansion of the dielectric will then be mainly
in the Z axis, which does not aect the beam lead
device. An alternate solution to the problem of dielec-
tric ground plane expansion is to heat the substrate to
the maximum required operating temperature during
the beam lead attachment. Thus, the substrate is at
maximum expansion when the device is bonded. Sub-
sequent cooling of the substrate will cause bugging,
similar to bugging in thermocompression bonding or
epoxy bonding. Other methods of bugging are pre-
forming the leads during assembly or prestressing the
substrate.
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Limited. All rights reserved. Obsoletes 5967-6157E
AV01-0594EN - October 20, 2006

HPND-4038

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
PIN Diodes 60 VBR 0.025 pF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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