NAME FUNCTION
14 14 — PG/RST
Power-Good Output, Open-Drain. PG_RST asserts high t
TIMEOUT
after all
OUT_ voltages exceed the V
TH_PG
thresholds.
15 15 10
FAULT
Tracking Fault Alert Output, Active Low, Open-Drain. FAULT asserts low if a
tracking failure is present for longer than the selected fault period or if
tracking voltages fail by more than ±250mV. FAULT asserts low if any OUT_
falls below the corresponding IN_ voltage.
16 — — OUT3
Channel 3 Monitored Output Voltage. Connect OUT3 to the source of an n-
channel FET. A fault condition activates a 100Ω pulldown to ground.
17 — — GATE3
Gate Drive for External n-Channel FET. An internal charge pump boosts
GATE3 to V
IN3
+ 5V to fully enhance the external n-channel FET when power-
up is complete.
18 18 11 OUT2
Channel 2 Monitored Output Voltage. Connect OUT2 to the source of an
n-channel FET. A fault condition activates a 100Ω pulldown to ground.
19 19 12 GATE2
Gate Drive for External n-Channel FET. An internal charge pump boosts
GATE2 to V
IN2
+ 5V to fully enhance the external n-channel FET when power-
up is complete.
20 20 13 OUT1
Channel 1 Monitored Output Voltage. Connect OUT1 to the source of an
n-channel FET. A fault condition activates a 100Ω pulldown to ground.
21 21 14 GATE1
Gate Drive for External n-Channel FET. An internal charge pump boosts
GATE1 to V
IN1
+ 5V to fully enhance the external n-channel FET when power-
up is complete.
22 — — IN3
23 23 15 IN2
24 24 16 IN1
Supply Input Voltage. IN1, IN2, or IN3 must be greater than the internal
undervoltage lockout (V
ABP
= 2.7V) to enable the tracking or sequencing
functionality. Each IN_ input is simultaneously monitored by SET_ inputs to
ensure all supplies have stabilized before power-up is enabled. If IN_ is
connected to ground or left unconnected and SET_ is above 0.5V, then no-
sequencing control is performed on that channel. Each IN_ is internally
pulled down by a 100kΩ resistor.
EP EP EP EP Exposed Paddle. Connect exposed paddle to ground.