CDBU0145-HF
SMD Schottky Barrier Diode
Page 1
QW-G1040
REV:B
Comchip Technology CO., LTD.
Io = 100 mA
VR = 45 Volts
RoHS Device
Halogen Free
O
Maximum Rating (at TA=25 C unless otherwise noted)
Typ
VRRM
Repetitive peak reverse voltage
Symbol
Parameter
Conditions Min
Max
Unit
V
50
VR
Reverse voltage
V
45
IFSM
Forward current, surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
1
PD
mW
O
C
250
+125-40
Power dissipation
Storage temperature
Tj
O
C
+125
Junction temperature
TSTG
A
IO
Average forward current
mA
100
Electrical Characteristics ( )
O
at TA=25 C unless otherwise noted
Symbol
Typ
Parameter
Conditions Min
Max
Unit
9
CT
Capacitance between terminals
pF
F = 1 MHZ and 10 VDC reverse voltage
Forward voltage
IF = 100 mA DC
VF
V
0.55
IR
uAReverse current
VR = 10V
1
Features
- Designed for mounting on small surface.
- Extremely thin / leadless package.
- Majority carrier conduction.
Mechanical data
- Case: 0603/SOD-523F standard package,
molded plastic.
- Terminals: Gold plated, solderable per
MIL-STD-750,method 2026
- Polarity: Indicated by cathode band.
- Weight: 0.003 grams(approx.).
- Mounting position: Any
Circuit Diagram
- Low leakage current. (IR=0.1uA typ.@VR=10V)
0.071(1.80)
0.063(1.60)
0.018(0.45)
0.039(1.00)
0.031(0.80)
0.033(0.85)
0.027(0.70)
Dimensions in inches and (millimeter)
0603/SOD-523F
0.014(0.35)
0.030(0.75)
0.012(0.30)
0.011(0.28)
0.026(0.65)
Company reserves the right to improve product design , functions and reliability without notice.
