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MSC2712YT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2015
February, 2015 − Rev. 7
Publication Order Number:
MSC2712GT1/D
1
MSC2712GT1G,
MSC2712YT1G
General Purpose
Amplifier Transistor
NPN Surface Mount
Features
• Moisture Sensitivity Level: 1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Value Unit
Collector−Base Voltage V
(BR)CBO
60 Vdc
Collector−Emitter Voltage V
(BR)CEO
50 Vdc
Emitter−Base Voltage V
(BR)EBO
7.0 Vdc
Collector Current − Continuous I
C
100 mAdc
Collector Current − Peak I
C(P)
200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation P
D
200 mW
Junction Temperature T
J
150 °C
Storage Temperature T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
SC−59
CASE 318D
STYLE 1
MARKING DIAGRAMS
12G MG
G
12Y MG
G
12M, 12Y = Specific Device Code
M = Date Code
G = Pb−Free Package
Device Package Shipping
†
ORDERING INFORMATION
MSC2712GT1G SC−59
(Pb−Free)
3000 / Tape & Ree
l
MSC2712YT1G SC−59
(Pb−Free)
3000 / Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
MSC2712GT1G, MSC2712YT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
Collector−Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
V
(BR)CEO
50 − Vdc
Collector−Base Breakdown Voltage
(I
C
= 10 mAdc, I
E
= 0)
V
(BR)CBO
60 − Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
7.0 − Vdc
Collector−Base Cutoff Current
(V
CB
= 45 Vdc, I
E
= 0)
I
CBO
− 0.1
mAdc
Collector−Emitter Cutoff Current
(V
CE
= 10 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0, T
A
= 80°C)
I
CEO
−
−
−
0.1
2.0
1.0
mAdc
mAdc
mAdc
DC Current Gain (Note 1)
(V
CE
= 6.0 Vdc, I
C
= 2.0 mAdc)
MSC2712GT1G
MSC2712YT1G
h
FE
200
120
400
240
−
Collector−Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
V
CE(sat)
− 0.5 Vdc
Current−Gain − Bandwidth Product
(I
C
= 1 mA, V
CE
= 10.0 V, f = 10 MHz)
f
T
50 −
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
MSC2712GT1G, MSC2712YT1G
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Collector Saturation Voltage
012 3 4 65
280
0
40
I
C
, COLLECTOR CURRENT (mA)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
80
120
160
Figure 2. DC Current Gain
1 10 100 1000
1000
10
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (mA)
100
T
A
= 25°C
6.0 mA
1.0 mA
I
B
= 0.2 mA
V
CE
= 1.0 V
T
A
= 100°C
−25°C
25°C
Figure 3. DC Current Gain
1 10 1000100
1000
10
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (mA)
100
Figure 4. V
CE(sat)
versus I
C
1 10 100 1000
1
0.01
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE
(V)
I
C
, COLLECTOR CURRENT (mA)
0.1
I
C
/I
B
= 10
T
A
= 100°C
−25°C
25°C
T
A
= 100°C
−25°C
25°C
Figure 5. V
BE(sat)
versus I
C
1 10 1000100
10
0.1
BASE−EMITTER SATURATION
VOLTAGE (V)
I
C
, COLLECTOR CURRENT (mA)
1
Figure 6. Base−Emitter Voltage
0 0.1
10,000
I
B
, BASE CURRENT (mA)
V
BE
, BASE−EMITTER VOLTAGE (V)
0.1
COMMON EMITTER
V
CE
= 6 V
T
A
= 100°C
−25°C
25°C
T
A
= 25°C
I
C
/I
B
= 10
1
10
100
1000
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
5.0 mA
3.0 mA
200
240
2.0 mA
0.5 mA
V
CE
= 6.0 V
P1-P3P4-P5

MSC2712YT1G

Mfr. #:
Buy MSC2712YT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 60V NPN
Lifecycle:
New from this manufacturer.
Delivery:
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