OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SQ3481EV-T1_GE3

P1-P3P4-P6P7-P9P10-P11
SQ3481EV
www.vishay.com
Vishay Siliconix
S11-2124-Rev. B, 07-Nov-11
1
Document Number: 71508
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
c
•100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V) - 30
R
DS(on)
() at V
GS
= - 10 V 0.043
R
DS(on)
() at V
GS
= - 4.5 V 0.070
I
D
(A) - 7.5
Configuration Single
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
TSOP-6
Top V iew
6
4
1
2
3
5
2.85 mm
3 mm
Marking Code: 8Exxx
ORDERING INFORMATION
Package TSOP-6
Lead (Pb)-free and Halogen-free SQ3481EV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
- 30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
- 7.5
A
T
C
= 125 °C - 4.3
Continuous Source Current I
S
- 5.2
Pulsed Drain Current
a
I
DM
- 30
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
- 15
Single Pulse Avalanche Energy E
AS
11 mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
4
W
T
C
= 125 °C 1.3
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
b
R
thJA
110
°C/W
Junction-to-Foot (Drain) R
thJF
36
SQ3481EV
www.vishay.com
Vishay Siliconix
S11-2124-Rev. B, 07-Nov-11
2
Document Number: 71508
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= - 250 μA - 30 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 μA - 1.5 - 2.0 - 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= - 30 V - - - 1
μA V
GS
= 0 V V
DS
= - 30 V, T
J
= 125 °C - - - 50
V
GS
= 0 V V
DS
= - 30 V, T
J
= 175 °C - - - 150
On-State Drain Current
a
I
D(on)
V
GS
= - 10 V V
DS
- 5 V - 10 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V I
D
= - 5.3 A - 0.035 0.043
V
GS
= - 4.5 V I
D
= - 2 A - 0.055 0.070
Forward Transconductance
b
g
fs
V
DS
= - 15 V, I
D
= - 5.3 A - 13 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= - 15 V, f = 1 MHz
- 695 870
pF Output Capacitance C
oss
- 160 200
Reverse Transfer Capacitance C
rss
- 120 150
Total Gate Charge
c
Q
g
V
GS
= - 10 V V
DS
= - 15 V, I
D
= - 5.3 A
- 15.4 23.5
nC Gate-Source Charge
c
Q
gs
-2.1
Gate-Drain Charge
c
Q
gd
-3.9
Gate Resistance R
g
f = 1 MHz 4.5 11.5 18.5
Turn-On Delay Time
c
t
d(on)
V
DD
= - 15 V, R
L
= 15
I
D
- 1 A, V
GEN
= - 10 V, R
g
= 1
-914
ns
Rise Time
c
t
r
-1523
Turn-Off Delay Time
c
t
d(off)
-2842
Fall Time
c
t
f
-1218
Pulsed Current
a
I
SM
--- 30A
Forward Voltage V
SD
I
F
= - 1.7 A, V
GS
= 0 V - - 0.8 - 1.2 V
SQ3481EV
www.vishay.com
Vishay Siliconix
S11-2124-Rev. B, 07-Nov-11
3
Document Number: 71508
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
012345
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
V
GS
= 10 V thru 5 V
V
GS
= 4 V
V
GS
= 3 V
0
0246810
4
8
12
16
20
I
D
- Drain Current (A)
g
fs
- Transconductance (S)
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
0
0 5 10 15 20 25 30
200
400
600
800
1000
1200
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
C
rss
C
iss
0
012345
4
8
12
16
20
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
0
0 4 8 12 16 20
0.04
0.08
0.12
0.16
0.20
I
D
- Drain Current (A)
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5 V
V
GS
= 10 V
0 4 8 121620
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
0
2
4
6
8
10
V
DS
= 15 V
I
D
= 5.3 A
P1-P3P4-P6P7-P9P10-P11

SQ3481EV-T1_GE3

Mfr. #:
Buy SQ3481EV-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-Channel 30V AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet