CAV93C66VE-GT3

CAV93C66
http://onsemi.com
4
Device Operation
The CAV93C66 is a 4096bit nonvolatile memory
intended for use with industry standard microprocessors.
The CAV93C66 can be organized as either registers of 16
bits or 8 bits. When organized as X16, seven 11bit
instructions control the reading, writing and erase
operations of the device. When organized as X8, seven
12bit instructions control the reading, writing and erase
operations of the device. The device operates on a single
power supply and will generate on chip, the high voltage
required during any write operation.
Instructions, addresses, and write data are clocked into the
DI pin on the rising edge of the clock (SK). The DO pin is
normally in a high impedance state except when reading data
from the device, or when checking the ready/busy status
after a write operation. The serial communication protocol
follows the timing shown in Figure 2.
The ready/busy status can be determined after the start of
internal write cycle by selecting the device (CS high) and
polling the DO pin; DO low indicates that the write
operation is not completed, while DO high indicates that the
device is ready for the next instruction. If necessary, the DO
pin may be placed back into a high impedance state during
chip select by shifting a dummy “1” into the DI pin. The DO
pin will enter the high impedance state on the rising edge of
the clock (SK). Placing the DO pin into the high impedance
state is recommended in applications where the DI pin and
the DO pin are to be tied together to form a common DI/O
pin.
The format for all instructions sent to the device is a
logical “1” start bit, a 2bit (or 4bit) opcode, 8bit address
(an additional bit when organized X8) and for write
operations a 16bit data field (8bit for X8 organizations).
The instruction format is shown in Instruction Set table.
Table 8. INSTRUCTION SET
Instruction Start Bit Opcode
Address Data
Comments
x8 x16 x8 x16
READ 1 10 A8A0 A7A0 Read Address AN – A0
ERASE 1 11 A8A0 A7A0 Clear Address AN – A0
WRITE 1 01 A8A0 A7A0 D7D0 D15D0 Write Address AN – A0
EWEN 1 00 11XXXXXXX 11XXXXXX Write Enable
EWDS 1 00 00XXXXXXX 00XXXXXX Write Disable
ERAL 1 00 10XXXXXXX 10XXXXXX Clear All Addresses
WRAL 1 00 01XXXXXXX 01XXXXXX D7D0 D15D0 Write All Addresses
Figure 2. Synchronous Data Timing
SK
DI
CS
DO
VALID VALID
DATA VALID
t
CSS
t
DIS
t
SKHI
t
SKLOW
t
DIS
t
DIH
t
CSH
t
CSMIN
t
PD0
, t
PD1
CAV93C66
http://onsemi.com
5
Read
Upon receiving a READ command and an address
(clocked into the DI pin), the DO pin of the CAV93C66 will
come out of the high impedance state and, after sending an
initial dummy zero bit, will begin shifting out the data
addressed (MSB first). The output data bits will toggle on
the rising edge of the SK clock and are stable after the
specified time delay (t
PD0
or t
PD1
).
For the CAV93C66 after the initial data word has been
shifted out and CS remains asserted with the SK clock
continuing to toggle, the device will automatically
increment to the next address and shift out the next data word
in a sequential READ mode. As long as CS is continuously
asserted and SK continues to toggle, the device will keep
incrementing to the next address automatically until it
reaches to the end of the address space, then loops back to
address 0. In the sequential READ mode, only the initial data
word is preceeded by a dummy zero bit. All subsequent data
words will follow without a dummy zero bit. The READ
instruction timing is illustrated in Figure 3.
Erase/Write Enable and Disable
The device powers up in the write disable state. Any
writing after powerup or after an EWDS (erase/write
disable) instruction must first be preceded by the EWEN
(erase/write enable) instruction. Once the write instruction
is enabled, it will remain enabled until power to the device
is removed, or the EWDS instruction is sent. The EWDS
instruction can be used to disable all CAV93C66 write and
erase instructions, and will prevent any accidental writing or
clearing of the device. Data can be read normally from the
device regardless of the write enable/disable status. The
EWEN and EWDS instructions timing is shown in Figure 4.
Figure 3. READ Instruction Timing
SK
CS
DI
DO
HIGHZ
11 0
Dummy 0
Don’t Care
A
N
A
N1
t
PD0
A
0
Address + n
D
15
.
.
.
or
D
7
.
.
.
Address + 2
D
15
.
.
.
D
0
or
D
7
.
.
.
D
0
Address + 1
D
15
.
.
.
D
0
or
D
7
.
.
.
D
0
D
15
.
.
.
D
0
or
D
7
.
.
.
D
0
CAV93C66
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6
Write
After receiving a WRITE command (Figure 5), address
and the data, the CS (Chip Select) pin must be deselected for
a minimum of t
CSMIN
. The falling edge of CS will start the
self clocking clear and data store cycle of the memory
location specified in the instruction. The clocking of the SK
pin is not necessary after the device has entered the self
clocking mode. The ready/busy status of the CAV93C66 can
be determined by selecting the device and polling the DO
pin. Since this device features AutoClear before write, it is
NOT necessary to erase a memory location before it is
written into.
Erase
Upon receiving an ERASE command and address, the CS
(Chip Select) pin must be deasserted for a minimum of
t
CSMIN
(Figure 6). The falling edge of CS will start the self
clocking clear cycle of the selected memory location. The
clocking of the SK pin is not necessary after the device has
entered the self clocking mode. The ready/busy status of the
CAV93C66 can be determined by selecting the device and
polling the DO pin. Once cleared, the content of a cleared
location returns to a logical “1” state.
Figure 4. EWEN/EWDS Instruction Timing
CS
DI
STANDBY
10
0
*
SK
* ENABLE = 11
DISABLE = 00
Figure 5. Write Instruction Timing
SK
CS
DI
DO
STANDBY
HIGHZ
HIGHZ
101
BUSY
READY
STATUS
t
HZ
t
EW
t
SV
VERIFY
A
N1
A
N
A
0
D
0
D
N
t
CSMIN
Figure 6. Erase Instruction Timing
SK
CS
DI
DO
STANDBY
HIGHZ
HIGHZ
1
BUSY
READY
STATUS
11
VERIFY
t
HZ
A
N
A
N1
A
0
t
CS
t
SV
t
EW

CAV93C66VE-GT3

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
EEPROM 4KB MICROWIRE SER EE
Lifecycle:
New from this manufacturer.
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