VS-HFA320NJ40CPbF
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Vishay Semiconductors
Revision: 28-Oct-16
1
Document Number: 94072
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
Ultrafast Soft Recovery Diode, 320 A
FEATURES
• Very low Q
rr
and t
rr
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced snubbing
DESCRIPTION / APPLICATIONS
HEXFRED
®
diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI
F
/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
PRODUCT SUMMARY
I
F(AV)
320 A
V
R
400 V
I
F(DC)
at T
C
255 A at 85 °C
Package TO-244 (TO-244AB)
Circuit Two diodes common cathode
Base common
cathode
Lug
terminal
anode 1
Lug
terminal
anode 2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
R
400 V
Continuous forward current I
F
T
C
= 25 °C 420
A
T
C
= 85 °C 255
T
C
= 115 °C 160
Single pulse forward current I
FSM
Limited by junction temperature 1200
Non-repetitive avalanche energy E
AS
L = 100 μH, duty cycle limited by maximum T
J
1.4 mJ
Maximum power dissipation P
D
T
C
= 25 °C 625
W
T
C
= 100 °C 250
Operating junction and storage
temperature range
T
J
, T
Stg
-55 to +150 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 400 - -
V
Maximum forward voltage V
FM
I
F
= 160 A
See fig. 1
- 1.10 1.35
I
F
= 320 A - 1.30 1.54
I
F
= 160 A, T
J
= 125 °C - 1.00 1.20
Maximum reverse
leakage current
I
RM
T
J
= 125 °C, V
R
= 400 V See fig. 2 - 0.9 3 mA
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 370 500 pF
Series inductance L
S
From top of terminal hole to mounting plane - 5.0 - nH