DG2536DN-T1-E4

Vishay Siliconix
DG2535/DG2536
Document Number: 72939
S-71009-Rev. E, 14-May-07
www.vishay.com
1
0.35-Ω Low-Voltage Dual SPDT Analog Switch
FEATURES
Low Voltage Operation
Low On-Resistance - r
ON
: 0.35 Ω at 2.7 V
- 69 dB OIRR at 2.7 V, 100 kHz
MSOP-10 and DFN-10 Packages
ESD Protection > 2000 V
Latch-Up Current > 300 mA (JESD 78)
BENEFITS
Reduced Power Consumption
High Accuracy
Reduce Board Space
1.8 V Logic Compatible
High Bandwidth
APPLICATIONS
Cellular Phones
Speaker Headset Switching
Audio and Video Signal Routing
PCMCIA Cards
Battery Operated Systems
Relay Replacement
DESCRIPTION
The DG2535/DG2536 is a sub 1 Ω (0.35 Ω at 2.7 V) dual
SPDT analog switches designed for low voltage applications.
The DG2535/DG2536 has on-resistance matching (less than
0.05 Ω at 2.7 V) and flatness (less than 0.2 Ω at 2.7 V) that are
guaranteed over the entire voltage range. Additionally, low
logic thresholds make the DG2535/DG2536 an ideal interface
to low voltage DSP control signals.
The DG2535/DG2536 has fast switching speed with
break-before-make guaranteed. In the On condition, all
switching elements conduct equally in both directions.
Off-isolation and crosstalk is - 69 dB at 100 kHz.
The DG2535/DG2536 is built on Vishay Siliconix’s
high-density low voltage CMOS process. An eptiaxial layer is
built in to prevent latchup. The DG2535/DG2536 contains the
additional benefit of 2,000 V ESD protection.
In space saving MSOP-10 and DFN-10 lead (Pb)-free
packages, the DG2535/DG2536 are high performance, low
r
ON
switches for battery powered applications. No lead (Pb) is
used in the manufacturing process either inside the device/
package or on the external terminations. As a committed
partner to the community and the environment, Vishay
Siliconix manufactures this product with the lead (Pb)-free
device terminations. For analog switching products
manufactured in DFN packages, the lead (Pb)-free "-E3/E4"
suffix is being used as a designator. Lead (Pb)-free DFN
products purchased at any time will have either a
nickel-palladium-gold device termination or a 100 % matte tin
device termination. The different lead (Pb)-free materials are
interchangeable and meet all JEDEC standards for reflow and
MSL rating.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
NO2
COM2
IN2
1
2
3
10
9
Top View
V+
NO1
COM1
8
DG2535
NC2
GND
4
5
7
IN1
NC1
6
NC2
COM2
IN2
1
2
3
10
9
Top View
V+
NC1
COM1
8
DG2536
NO2
GND
4
5
7
IN1
NO1
6
TRUTH TABLE
Logic NC1 and NC2 NO1 and NO2
0ONOFF
1OFFON
ORDERING INFORMATION
Temp Range Package Part Number
- 40 to 85 °C
MSOP-10
DG2535DQ-T1-E3
DG2536DQ-T1-E3
DFN-10
DG2535DN-T1-E4
DG2536DN-T1-E4
RoHS
COMPLIANT
www.vishay.com
2
Document Number: 72939
S-71009-Rev. E, 14-May-07
Vishay Siliconix
DG2535/DG2536
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/°C above 70 °C
d. Derate 14.9 mW/°C above 70 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
Referenced V+ to GND - 0.3 to + 6
V
IN, COM, NC, NO
a
- 0.3 to (V+ + 0.3)
Continuous Current (NO, NC, COM) ± 300
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 500
Storage Temperature (D Suffix) - 65 to 150 °C
ESD per Method 3015.7 > 2 kV
Power Dissipation (Packages)
b
MSOP-10
c
320
mW
DFN-10
d
1191
SPECIFICATIONS (V+ = 3 V)
Parameter Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, V
IN
= 0.5 or 1.4 V
e
Temp
a
Limits
- 40 to 85 °C
Unit Min
b
Typ
c
Max
b
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
V
COM
Full 0 V+ V
On-Resistance
r
ON
V+ = 2.7 V, V
COM
= 0.6 V/1.5 V, I
NO
, I
NC
= 100 mA
Room
Full
0.35 0.5
0.6
Ω
r
ON
Flatness
d
r
ON
Flatness
Room 0.09 0.2
On-Resistance
Match Between Channels
d
Δr
DS(on)
Room 0.05
Switch Off
Leakage Current
I
NO(off)
I
NC(off)
V+ = 3.3 V
V
NO
, V
NC
= 0.3 V/3 V, V
COM
= 3 V/0.3 V
Room
Full
- 1
- 10
1
10
nA
I
COM(off)
Room
Full
- 1
- 10
1
10
Channel-On
Leakage Current
I
COM(on)
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 0.3 V/3 V
Room
Full
- 1
- 10
1
10
Digital Control
Input High Voltage
d
V
INH
Full 1.4
V
Input Low Voltage
V
INL
Full 0.5
Input Capacitance
C
in
Full 10 pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full 1 1 µA
Document Number: 72939
S-71009-Rev. E, 14-May-07
www.vishay.com
3
Vishay Siliconix
DG2535/DG2536
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
SPECIFICATIONS (V+ = 3 V)
Parameter Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, V
IN
= 0.4 or 2.0 V
e
Temp
a
Limits
- 40 to 85 °C
Unit Min
b
Typ
c
Max
b
Dynamic Characteristics
Tu r n - On T im e
t
ON
V
NO
or V
NC
= 2.0 V, R
L
= 50 Ω, C
L
= 35 pF
Room
Full
52 82
90
ns
Turn-Off Time
t
OFF
Room
Full
43 73
78
Break-Before-Make Time
t
d
Full 1 6
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 1.5 V, R
GEN
= 0 Ω
Room 21 pC
Off-Isolation
d
OIRR
R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz
Room - 69
dB
Crosstalk
d
X
TA LK
Room - 69
N
O
, N
C
Off Capacitance
d
C
NO(off)
V
IN
= 0 or V+, f = 1 MHz
Room 145
pF
C
NC(off)
Room 145
Channel-On Capacitance
d
C
NO(on)
V
IN
= 0 or V+, f = 1 MHz
Room 406
C
NC(on
Room 406
Power Supply
Power Supply Current I+
V
IN
= 0 or V+
Full 1.0 µA

DG2536DN-T1-E4

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs RECOMMENDED ALT 78-DG2535EDN-T1-GE4
Lifecycle:
New from this manufacturer.
Delivery:
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