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BAS16HT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 12
1 Publication Order Number:
BAS16HT1/D
BAS16H, SBAS16H
Switching Diode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
100 Vdc
Peak Forward Current I
F
200 mAdc
Non−Repetitive Peak Forward Surge
Current, 60 Hz
I
FSM(surge)
500 mAdc
Repetitive Peak Forward Current
(Note 2)
I
FRM
1.0 A
Non−Repetitive Peak Forward Current
(Square Wave, T
J
= 25°C prior to
surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t = 1 s
I
FSM
36.0
18.0
6.0
3.0
0.7
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
P
D
200
1.57
mW
mW/°C
Thermal Resistance Junction to Ambient
R
q
JA
635 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
150
°C
1. FR-4 Minimum Pad.
2. Square Wave, f = 40 kHz, PW = 200 ns
Test Duration = 60 s, T
J
= 25°C prior to surge.
www.onsemi.com
SOD−323
CASE 477
STYLE 1
MARKING DIAGRAM
1
CATHODE
2
ANODE
A6 = Specific Device Code
M = Date Code
Device Package Shipping†
ORDERING INFORMATION
BAS16HT1G SOD−323
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
1
2
A6 M
SBAS16HT1G SOD−323
(Pb−Free)
3000 /T ape & Reel
BAS16HT3G SOD−323
(Pb−Free)
10000 / Tape & Ree
l
SBAS16HT3G SOD−323
(Pb−Free)
10000 / Tape & Ree
l
BAS16H, SBAS16H
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 100 Vdc)
(V
R
= 75 Vdc, T
J
= 150°C)
(V
R
= 25 Vdc, T
J
= 150°C)
I
R
−
−
−
1.0
50
30
mAdc
Reverse Breakdown Voltage
(I
BR
= 100 mAdc)
V
(BR)
100 − Vdc
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F
−
−
−
−
715
855
1000
1250
mV
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
− 2.0 pF
Forward Recovery Voltage
(I
F
= 10 mAdc, t
r
= 20 ns)
V
FR
− 1.75 Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, R
L
= 50 W)
t
rr
− 6.0 ns
Stored Charge
(I
F
= 10 mAdc to V
R
= 5.0 Vdc,
R
L
= 500 W)
Q
S
− 45 pC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BAS16H, SBAS16H
www.onsemi.com
3
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820 W
0.1 mF
D.U.T.
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
100
0.2 0.4
V
F
, FORWARD VOLTAGE (V)
0.6 0.8 1.0
1.2
10
1.0
0.1
T
A
= 85°C
10
0
V
R
, REVERSE VOLTAGE (V)
1.0
0.1
0.01
0.001
10 20 30 40
50
0.68
0
V
R
, REVERSE VOLTAGE (V)
0.64
0.60
0.56
0.52
C
D
, DIODE CAPACITANCE (pF)
2468
I
F
, FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
T
A
= -40°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
I
R
, REVERSE CURRENT (μA)
Figure 5. Maximum Non−repetitive Peak
Forward Current as a Function of Pulse
Duration, Typical Values
T
p
(mSec)
10.10.010.001
0
5
10
15
20
25
I
FSM
(A)
10
30
35
40
Based on square wave currents
T
J
= 25°C prior to surge
0.0001
P1-P3P4-P4

BAS16HT1G

Mfr. #:
Buy BAS16HT1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching 75V 200mA
Lifecycle:
New from this manufacturer.
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