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IXFT80N15Q

P1-P2
© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 150 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MW 150 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C80A
I
DM
T
C
= 25°C, pulse width limited by T
JM
320 A
I
AR
T
C
= 25°C80A
E
AR
T
C
= 25°C45mJ
E
AS
T
C
= 25°C 1.5 J
dv/dt I
S
£ I
DM
, di/dt £ 100 A/ms, V
DD
£ V
DSS
, 5 V/ns
T
J
£ 150°C, R
G
= 2 W
P
D
T
C
= 25°C 360 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.063 in) from case for 10 s 300 °C
M
d
Mounting torque TO-247 1.13/10 Nm/lb.in.
TO-264 0.9/6 Nm/lb.in.
Weight TO-247 6 g
TO-264 10 g
TO-268 4 g
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Features
l
Low gate charge
l
International standard packages
l
Epoxy meet UL 94 V-0, flammability
classification
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Avalanche energy and current rated
l
Fast intrinsic Rectifier
Advantages
l
Easy to mount
l
Space savings
l
High power density
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 250 uA 150 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA 2.0 4.0 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= V
DSS
T
J
= 25°C25mA
V
GS
= 0 V T
J
= 125°C1mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 • I
D25
22.5 mW
Pulse test, t £ 300 ms, duty cycle d £ 2 %
G = Gate
S = Source TAB = Drain
98725 (05/31/00)
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
(TAB)
G
S
TO-264 AA (IXFK)
S
G
D
D (TAB)
IXFH 80N15Q
IXFK 80N15Q
IXFT 80N15Q
V
DSS
= 150 V
I
D25
= 80 A
R
DS(on)
= 22.5 mW
t
rr
£ 200 ns
Preliminary data sheet
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 10 V; I
D
= 0.5 • I
D25
, pulse test 35 50 S
C
iss
4500 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1400 pF
C
rss
680 pF
t
d(on)
30 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
55 ns
t
d(off)
R
G
= 2.0 W (External), 68 ns
t
f
20 ns
Q
g(on)
180 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
39 nC
Q
gd
85 nC
R
thJC
0.35 K/W
R
thCK
TO-247 0.25 K/W
TO-264 0.15 K/W
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
ÆP 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
TO-268 Outline
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 80 A
I
SM
Repetitive; pulse width limited by T
JM
320 A
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t
rr
200 ns
Q
RM
1.2 mC
I
RM
10 A
I
F
= I
S
-di/dt = 100 A/ms, V
R
= 100 V
IXFH 80N15Q IXFK 80N15Q
IXFT 80N15Q
TO-264 AA Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
P1-P2

IXFT80N15Q

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Description:
MOSFET 80 Amps 150V 0.0225 Rds
Lifecycle:
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