BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 4 of 14
NXP Semiconductors
BAV99 series
High-speed switching diodes
6. Thermal characteristics
[1] Single diode loaded.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Soldering points at pins 2, 3, 5 and 6.
7. Characteristics
[1] When switched from I
F
= 10 mA to I
R
=10mA; R
L
= 100 Ω; measured at I
R
=1mA.
[2] When switched from I
F
=10mA; t
r
=20ns.
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1][2]
BAV99 - - 500 K/W
BAV99W - - 625 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
BAV99 - - 360 K/W
BAV99S
[3]
- - 260 K/W
BAV99W - - 300 K/W
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
forward voltage I
F
= 1 mA - - 715 mV
I
F
= 10 mA - - 855 mV
I
F
=50mA --1V
I
F
=150mA --1.25V
I
R
reverse current V
R
=25V --30nA
V
R
=80V --0.5μA
V
R
=25V; T
j
=150°C --30μA
V
R
=80V; T
j
=150°C --50μA
C
d
diode capacitance f = 1 MHz; V
R
=0V --1.5pF
t
rr
reverse recovery time
[1]
--4ns
V
FR
forward recovery voltage
[2]
--1.75V