www.ams.com/LED-Driver-ICs/AS1109 Revision 1.21 3 - 24
AS1109
Datasheet - Absolute Maximum Ratings
5 Absolute Maximum Ratings
Stresses beyond those listed in Table 2 may cause permanent damage to the device. These are stress ratings only, and functional operation of
the device at these or any other conditions beyond those indicated in Electrical Characteristics on page 4 is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Table 2. Absolute Maximum Ratings
Parameter Min Max Units Comments
Electrical Parameters
VDD to GND -0.3 7 V
Input Voltage -0.4 V
DD + 0.4 V
Output Voltage -0.4 15 V
GND Pin Current 1000 mA
Input Current (latch-up immunity) -100 100 mA Norm: JEDEC 78
Electrostatic Discharge
Electrostatic Discharge HBM 2 kV Norm: MIL 883 E method 3015
Temperature Ranges and Storage Conditions
Thermal Resistance Θ
JA
33 ºC/W on PCB, 16-pin SOIC-150 package
113 ºC/W on PCB, 16-pin QSOP-150 package
32 ºC/W on PCB, 16-pin QFN (4x4mm) package
Storage Temperature Range -55 +150 ºC
Package Body Temperature
+260
ºC
The reflow peak soldering temperature (body
temperature) specified is in accordance with IPC/
JEDEC J-STD-020“Moisture/Reflow Sensitivity
Classification for Non-Hermetic Solid State Surface
Mount Devices”.
The lead finish for Pb-free leaded packages is matte tin
(100% Sn).
Humidity non-condensing 5 85 %
Moisture Sensitive Level
QFN and QSOP 1 Represents a maximum floor life time of unlimited
Moisture Sensitive
Layer (SOIC)
3 Represents a maximum floor life of 168h
www.ams.com/LED-Driver-ICs/AS1109 Revision 1.21 4 - 24
AS1109
Datasheet - Electrical Characteristics
6 Electrical Characteristics
VDD = +3.0V to +5.5V, Typical values measured at VDD = 5V, TAMB = 25°C (unless otherwise specified).
Table 3. Electrical Characteristics
Symbol Parameter Condition Min Typ Max Unit
T
AMB
Operating Temperature Range Device fully functional up to 125°C -40 +85 °C
VDD
Supply Voltage 3.0 5.5 V
V
DS
Output Voltage OUTN0:7 0 15.0 V
IOUT
Output Current
OUTN0:7, V
DD = 5V (see Figure 8) 0.5 100
mA
I
OH
SDO -1.0
I
OL
SDO 1.0
V
IH
Input Voltage
High Level
CLK, OEN, LD, SDI
0.7 x
VDD
VDD +
0.3
V
V
IL
Low Level -0.3
0.3 x
VDD
I
DS(OFF)
Output Leakage Current OEN = 1, VDS = 15.0V 0.5 µA
V
OL
Output
Voltage
SDO
I
OL = +1.0mA 0.4
V
V
OH
IOH = -1.0mA
VDD -
0.4V
I
AV(LC1)
Device-to-Device Average Output Current
from OUTN0 to OUTN7
VDS = 0.5V, VDD = Const.,
REXT = 744Ω
24.5 25.26 26 mA
ΔIAV(LC1)
Current Skew
(Between Channels)
VDS 0.5V, VDD = Const.,
R
EXT = 744Ω
±0.9 ±3 %
I
AV(LC2)
Device-to-Device Average Output Current
from OUTN0 to OUTN7
VDS = 0.6V, VDD > 3.3V,
REXT = 372Ω
49.50 50.52 51.55 mA
ΔI
AV(LC2)
Current Skew
(Between Channels)
V
DS 0.6V, VDD = Const.,
R
EXT = 372Ω
±0.8 ±2 %
I
AV(LC3)
Device-to-Device Average Output Current
from OUTN0 to OUTN7
VDS = 0.8V, VDD = 5.0V,
REXT = 186Ω
98 101 104 mA
ΔI
AV(LC3)
Current Skew
(Between Channels)
V
DS 0.8V, VDD = Const.,
R
EXT = 186Ω
±0.5 ±2 %
I
LC
Low-Current Diagnosis Mode VDS = 0.8V, VDD = 5.0V 0.4 0.6 0.8 mA
I
PD
Power Down Supply Current
VDS = 0.8V, VDD = 5.0V,
REXT = 372Ω, OUTN0:7 = On
320µA
%/ΔV
DS
Output Current vs.
Output Voltage Regulation
VDS within 1.0 and 3.0V ±0.1 %/V
%/ΔV
DD
Output Current vs.
Supply Voltage Regulation
VDD within 3.0 and 5.0V ±1 %/V
R
IN(UP)
Pullup Resistance OEN 250 500 800 kΩ
R
IN(DOWN)
Pulldown Resistance LD 250 500 800 kΩ
V
THL
*
Open Error Detection Threshold Voltage No load 0.25 0.35 0.45 V
V
THH
*
Short Error Detection Threshold Voltage
V
DD = 3.0V, no load 1.2 1.3 1.4
V
V
DD = 5.0V, no load 2.0 2.2 2.4
T
OV1
Overtemperature Threshold Flag 150 ºC
www.ams.com/LED-Driver-ICs/AS1109 Revision 1.21 5 - 24
AS1109
Datasheet - Electrical Characteristics
6.1 Switching Characteristics
VDD = 3.0 to 5.5V, VDS = 0.8V, VIH = VDD, VIL = GND, REXT = 372Ω, VLOAD = 4.0V, RLOAD = 64Ω, CLOAD = 10pF; guaranteed by design.
*
If multiple AS1109 devices are cascaded and tr or tf is large, it may be critical to achieve the timing required for data transfer between two
cascaded LED drivers.
Note: All limits are guaranteed. The parameters with min and max values are guaranteed with production tests or SQC (Statistical Quality
Control) methods.
I
DD(OFF)0
Supply Current
Off
R
EXT = Open‚ OUTN0:7 = Off 1.3 2
mA
I
DD(OFF)1
REXT = 744Ω‚ OUTN0:7 = Off 3.0 3.68
I
DD(OFF)2
REXT = 372Ω‚ OUTN0:7 = Off 4.7 5.37
I
DD(OFF)3
REXT = 186Ω, OUTN0:7 = Off 8.1 8.73
I
DD(ON)1
On
R
EXT = 744Ω‚ OUTN0:7 = On 4.5 5
I
DD(ON)2
REXT = 372Ω‚ OUTN0:7 = On 7.5 8
I
DD(ON)3
REXT = 186Ω‚ OUTN0:7 = On 13.7 15
Table 4. Switching Characteristics
Symbol Parameter Conditions Min Typ Max Unit
t
P1 Propagation Delay Time CLK - SDO 5 10
nst
P2
Propagation Delay Time (Without Staggered
Output Delay)
LD - OUTNn 100 200
t
P3 OEN - OUTNn 100 200
t
P4 Propagation Delay Time 10 ns
t
W(CLK)
Pulse Width
CLK 15
nst
W(L) LD 15
t
W(OE) OEN (@IOUT < 60mA) 200
tR
*
Maximum CLK Rise Time 500 ns
t
F
*
Maximum CLK Fall Time 500 ns
tOR Output Rise Time of VOUT (Turn Off) 100 200 ns
t
OF Output Fall Time of VOUT (Turn On) 100 300 ns
t
SU(D) Setup Time for SDI 5 ns
t
H(D) Hold Time for SDI 5 ns
t
SU(L) Setup Time for LD 5 ns
t
H(L) Hold Time for LD 5 ns
t
TESTING Minimum OEN Time for Error Detection 2000 ns
t
STAG Staggered Output Delay 20 40 ns
t
SU(OE) Output Enable Setup Time 20 ns
t
GSW(ERROR) Global Error Switching Setup Time 10 ns
t
SU(ERROR) Global Error Detection Setup Time 10 ns
t
P(I/O) Propagation Delay Global Error Flag 5 ns
t
SW(ERROR) Switching Time Global Error Flag 10 ns
f
CLK
Maximum Clock Frequency
(Cascade Operation)
30 50 MHz
t
P3,ON
Low-Current Test Mode
Propagation Delay Time
Turn ON 3 5 µs
tTP3,OFF
Turn OFF 0.05 0.1 µs
t
REXT2,1
External Resistor Reaction Time Change from REXT1 = 372Ω, IOUT1
= 50.52mA to REXT2 = 37.2kΩ,
I
OUT2 < 1mA
0.5 1 µs
t
REXT2,1
External Resistor Reaction Time Change from REXT1 = 37.2kΩ,
IOUT1 = 0.5mA to REXT2 = 372Ω,
IOUT2 > 25mA
0.5 1 µs
Table 3. Electrical Characteristics (Continued)
Symbol Parameter Condition Min Typ Max Unit

AS1109-BSSU-Z

Mfr. #:
Manufacturer:
ams
Description:
LED Display Drivers AS1109-BSSU-Z QSOP16 LF TUB
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